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GaN Transistors: TGF2819-FL / TGF2819-FS

RFMW Ltd.
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TGF2819-FL and TGF2819-FSRFMW Ltd. announces design and sales support for the TGF2819-FL and TGF2819-FS GaN transistors from TriQuint. These 32 V devices from TriQuint offer 20 W average power for non-pulsed applications and over 100 W peak power. Covering frequencies up to 3.5 GHz, the TGF2819-FL and TGF2819-FS are input pre-matched for S-Band applications in Radar and avionics.


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VPIN Limiter: TGL2203

RFMW Ltd.
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TGL2203RFMW Ltd. announces design and sales support for the TriQuint TGL2203, a 1 W VPIN limiter for Ka-band Radar systems. The TGL2203 has integrated DC blocks on both input and output ports. Capable of handling 1 W of incident CW power, this passive device has a flat leakage rate of <20 dBm at Pin <30 dBm. Insertion loss is <1 dB.


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GaN Amplifiers: TGA2624 / TGA2625

RFMW Ltd.
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TGA2624RFMW Ltd. announces a pair of GaN amplifiers targeted at weather and marine radar applications. Both TriQuint amplifiers operate from a 28 V bias drawing 365 mA of current and both the TGA2624 and TGA2625 are offered in DIE formats.  The TGA2624 (9 to 10 GHz) supports a saturated output power of 42.5 dBm. TriQuint’s TGA2625 (10 to 11 GHz) is specified at 43 dBm  Psat with 37 dB of gain.


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Substrate-Based Thin Film Circuits

Metrigraphics
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ThinFilmCircuitsMetrigraphics has developed new breakthroughs in processing substrate-based ultra-miniaturized circuits. The additive processes used are an alternative to traditional chemical etching, which causes circuit lines to slope, resulting in performance variations and yield issues. Using these additive fabrication techniques, Metrigraphics can now manufacture circuits in high volume.


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Bare Die Power Amplifier: MAAP-011106

Richardson RFPD / Arrow RF & Power
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MACOM_MAAP011106_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a four-stage, 71 to 86 GHz, bare die power amplifier from M/A-COM Technology Solutions. The MAAP-011106 provides +25 dBm saturated output power and 20 dB small signal gain. The input and output are matched to 50Ω with bond wires to the external board.


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Multi-Octave, Wideband MMIC Devices

Richardson RFPD / Arrow RF & Power
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Microsemi_MMICs_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a range of new, multi-octave, wideband MMIC devices, including a switch and eight amplifiers, from Microsemi Corporation. The new devices provide outstanding electrical performance, with frequency coverage as wide as DC to 22 GHz.


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Adjustable Power Limiter: PE45450

RFMW Ltd.
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PE45450RFMW, Ltd. announces design and sales support for Peregrine Semiconductor’s PE45450, adjustable power limiter providing protection for up to 50 W pulsed RF input from 9 kHz to 6 GHz. This broadband limiter can handle up to 10 W of power in CW applications. The adjustable power limiting threshold, from +25 to +35 dBm, enables flexibility across different platforms and architectures.


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MMIC Low Noise Amplifier: MAAL-011078

Richardson RFPD / Arrow RF & Power
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MAAL-011078The MAAL-011078 is designed for operation from 700 MHz to 6 GHz and is housed in a lead-free 2 mm 8-lead PDFN plastic package. The LNA has an integrated active bias circuit, allowing direct connection to 3 or 5 V bias and minimizing variations over temperature and process. V bias can be utilized as an enable pin to power the device up and down during operation.
 


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VPIN Limiters: TGL2206-SM / TGL2207-SM

RFMW Ltd.
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TGL2206-SMRFMW, Ltd. announces design and sales support for a pair of 100 W VPIN limiters from TriQuint. The TGL2206-SM covers applications falling from 2 to 5.5 GHz while the TGL2207-SM extends the range from 2 to 6.5 GHz. Both limiters offer <1 dB insertion loss and neither the TGL2206-SM nor TGL2207-SM require DC bias. Input/output return loss measures 15 dB.


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MMIC Driver Amplifier: CMD207

Custom MMIC
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CMD207Custom MMIC announces the CMD207, a new 20 to 40 GHz MMIC driver amplifier in die form with an all positive bias scheme, to their growing list of standard products. The CMD207 delivers 25 to 30 dB of gain, has an output 1 dB compression point of +18.5 dBm, a saturated output power of +21 dBm, and a noise figure of 5 to 6 dB across the entire 20 to 40 GHz bandwidth.


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