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Aerospace and Defense Channel

EMSS and Optenni announce workflow between FEKO and Optenni

EDAFocus

FEKOMatching circuits for antennas and other RF components based on 3D models can now be easily optimized by designers who use FEKO together with Optenni Lab.


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TriQuint signs U.S. Army agreement to support GaN device developement

TriQuint Semiconductor Inc. announced that it has signed a Cooperative Research and Development Agreement (CRADA) with the U.S. Army Research Laboratory (ARL) to explore and fabricate new high-frequency and mixed signal integrated circuits (ICs) based on TriQuint gallium nitride (GaN) technology.


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Thales completes acquisition of Tampa Microwave

Thales has completed the acquisition of Tampa Microwave, a privately held company specializing in tactical satellite communications terminals and related products for defense, government, and commercial customers.


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BAE Systems signs MoU with MIGHT

MarketWatch: International

BAE SystemsBAE Systems and the Malaysian Industry Group High Technology (MIGHT) have signed a Memorandum of Understanding to strengthen industrial cooperation between the UK and Malaysia


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Newtec demonstrates 310 Mbps over a 36 MHZ Yahsat transponder

In what could be considered a 'world record' Newtec has demonstrated a 310 Mbps transport over a 36 Mhz transponder. Tests and validations were carried out using existing antennae and power infrastructure on Yahsat’s Y1A.


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Nitronex XPT1015 provides rugged, robust, and reliable RF power amplifier solution

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has developed a rugged transistor technology capable of surviving the industry’s most severe robustness tests without significant device degradation.


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Ka-Band LNA MMIC

MMICS&More

CMD162-PRCustom MMIC is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB.


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Richardson RFPD introduces new GaN on SiC M/A-COM Tech power transistors

Richardson RFPD Inc. announces immediate availability and full design support capabilities for eight devices representing the new gallium nitride (GaN) on Silicon Carbide (SiC) family of power transistors from M/A-COM Technology Solutions Inc. This product family targets L- and S-Band applications from 960 to 3500 MHz and reinforces M/A-COM Tech's rich heritage of leadership in power hybrid technology.


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Raytheon seeks to triple Gallium Nitride capabilities

MarketWatch: Defense

RaytheonRaytheon Co. has been awarded an 18-month, $1.8 million contract by the DARPA to develop next-generation GaN devices bonded to diamond substrates.


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RFMD announces retirement of co-founder Jerry D. Neal from the company

RF Micro Devices, Inc. announced that Jerry Neal, co-founder and executive vice president of marketing, is retiring from RFMD, effective May 31, 2012.


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