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Industry News

A Voltage Variable Attenuator Using Silicon PIN Diodes and a Passive GaAs MMIC in a Plastic SMT Package

A voltage variable attenuator (VVA) for the commercial wireless market with linear operating power and intercept points higher than GaAs FET-based VVAs
PRODUCT FEATURES A Voltage Variable Attenuator Using Silicon PIN Diodes and a Passive GaAs MMIC in a Plastic SMT Package RF& MW Components Group, M/A-COM Inc. Lowell, MA A unique voltage variable attenuator (VVA) has been developed for the commercial wireless market. The device has linear operating power and...
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A Simple Gain Equalizer for a PCS-band Amplifier

A simple distributed network, which has the effect of flattening the frequency response of an amplifier or system by reducing its gain in a particular frequency range
TECHNICAL NOTES A Simple Gain Equalizer for a PCS-band Amplifier Barney Arntz Philips Semiconductors Mansfield, MA A simple distributed network is described, which has the effect of flattening the frequency response of an amplifier or system by reducing its gain in a particular frequency range. Operating with a quarter-wave...
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Improving Accuracy and Reliability of Microwave On-wafer Silicon Device Measurements

Recent research findings and general guidelines that relate to microwave on-wafer measurement of devices fabricated using silicon technologies
TECHNICAL FEATURES Improving Accuracy and Reliability of Microwave On-wafer Silicon Device Measurements Troels Emil Kolding Aalborg University, RISC Group Denmark Aalborg, Denmark This article summarizes recent research findings and general guidelines for microwave on-wafer measurement of devices fabricated using silicon technologies. Issues specific to low resistivity substrates and low...
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Extending Gold Thick-film Technology through Materials and Process Development

A combination of new gold powder technology and advanced manufacturing techniques that makes it possible to achieve fine-line resolutions of 3 mils (75 µm) through screen printing methods
TECHNICAL FEATURES Extending Gold Thick-film Technology through Materials and Process Development Meg Tredinnick and David Malanga Heraeus Inc., Circuit Materials Division West Conshohocken, PA New powder and screen technologies have allowed for the development of a thick-film gold paste that meets a difficult list of requirements. This new Au...
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Time Domain Analysis of a Printed Circuit Board Via

Time domain analysis of a printed circuit board via connecting two semi-infinitely-long microstrip transmission lines above a ground plane
TECHNICAL FEATURES Time Domain Analysis of a Printed Circuit Board Via Brock J. LaMeres Agilent Technologies Colorado Springs, CO T.S. Kalkur University of Colorado, Department of Electrical and Computer Engineering Colorado Springs, CO This article describes the time domain analysis of a printed circuit board via connecting two semi-infinitely-long...
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Finite Element Analysis of RF Couplers With Sliced Coaxial Cable

Analysis of two coupled lines with sliced coaxial cable based on a numerical resolution of the Laplace's equation by the finite element method
TECHNICAL FEATURES Finite Element Analysis of RF Couplers With Sliced Coaxial Cable N. Benahmed and M. Feham University of Tlemcen, Department of Electronic Tlemcen, Algeria This article presents the analysis of two coupled lines with sliced coaxial cable, based on a numerical resolution of the Laplace's equation by the...
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A Dynamic Drain Current Model for MESFET/HEMTs Valid Under Varying Static Bias and Temperature Conditions

Modifications to the Dortu-Muller DC drain current model for GaAs MESFET/HEMT devices that enable the dynamic output characterisitcs of the device to be simulated under different temperature and static bias conditions
TECHNICAL FEATURES A Dynamic Drain Current Model for MESFET/HEMTs Valid Under Varying Static Bias and Temperature Conditions J.M. Cairon, A. Tazon, T. Fernandez, C. Navarro and A. Mediavilla University of Cantabria Cantabria, Spain J. Rodriguez-Tellez University of Bradford West Yorkshire, UK Modifications to the Dortu-Muller DC drain current model...
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Design Considerations for Thick-film High Power Chip Terminations

Three strongly interrelated aspects of thick-film termination design: materials and processes, thermal management and RF impedance matching
TECHNICAL FEATURES Design Considerations for Thick-film High Power Chip Terminations Robert Grossbach American Technical Ceramics Huntington Station, NY A s the wireless revolution extends component requirements upward in frequency, higher in operating power and smaller in size, the performance demands on surface-mount devices grow ever more stringent. Chip terminations...
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The ABCs of Device Biasing

An overview of the basics of device biasing and the most common modes of amplifier operation
TUTORIALS The ABCs of Device Biasing Brian Battaglia Motorola, Wireless Infrastructure Systems Division Tempe, AZ T his tutorial article covers the most common modes of amplifier operation. Each mode of operation has distinct characteristics associated with it and, therefore, the modes are delineated into individual classes. Each class has...
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Shielding Formulas for Near Fields

Extremely low frequency formulas for magnetic shielding effectiveness
TECHNICAL NOTES Shielding Formulas for Near Fields R.C. Hansen Consulting Engineer Tarzana, CA This article reviews extremely low frequency (ELF) formulas for magnetic shielding effectiveness. In particular, the simple three-term Schelkunoff formula is accurate at all frequencies if the proper near-field, or far-field, wave impedance is used. E lectromagnetic...
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