Industry News

Peregrine and IBM Partner on SOS Roadmap

Peregrine Semiconductor and IBM have teamed up to develop and manufacture future generations of Peregrine's patented UltraCMOS™ silicon-on-sapphire (SOS) process technology. When fully qualified, the next-generation UltraCMOS RF ICs will be manufactured by IBM for Peregrine in the jointly-developed 180-nanometer RF CMOS process at IBM's 200 mm semiconductor manufacturing...
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Around The Circuit

Industry News Wireless Telecom Group Inc. announced the execution of a definitive agreement to sell substantially all of the operating assets of its wholly owned subsidiary Willtek Communications GmbH and affiliates to Aeroflex Inc. , a Delaware corporation, in exchange for $2,750,000 in cash and the assumption of certain...
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New Products

Medium Power Amplifiers AML announces the immediate availability of medium power broadband amplifiers model AML0126P3001 and AML0126P3002. Operating in the frequency range of 100 MHz to 26.5 GHz, these amplifiers offer gain of 30 dB minimum and typical noise figure below 5 dB (above 500 MHz). Output P1dB is...
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Ready for Anaheim?

1999 was the last time the International Microwave Symposium was held at the Anaheim Convention Center. The Symposium theme, “The Magic Touch of Microwaves,” was a play off the proximity to Disney’s Magic Kingdom. However, General Chair Bob Eisenhart, writing in the Microwave Journal show issue from that year,...
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Harris Corp. Receives $20 M from US DoD

Harris Corp. , an international communications and information technology company, has received a $20 M order from the US Department of Defense for Falcon III AN/PRC-117G multiband manpack radio systems, accessory kits and other tactical communications products. The field-proven Harris AN/PRC-117G provides warfighters with unprecedented situational awareness of the...
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Nitronex and Modelithics Release Nonlinear GaN Device Model

Nitronex and Modelithics have released the first state-of-the-art nonlinear model for Nitronex’s high power gallium nitride (GaN) NPT1012 device. The model combines heating effects, static and dynamic bias characteristics with large-signal performance to deliver accuracy unlike other GaN HEMT device models. The collaborative model predicts performance of the NPT1012...
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