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Industry News

An Interactive Internet Service That Provides On-line Circuit Design

An innovative service that allows designers to design a product based on the company's Multi-Mix multilayer fabrication technology through a high speed Internet connection
An Interactive Internet Service That Provides On-line Circuit Design Merrimac Industries Inc. West Caldwell, NJ As the Internet changes the world's concept of entertainment, information, finance, commerce and hundreds of other disciplines, it remains relatively unexplored by the RF and microwave industry for much more than catalog perusal. However,...
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Temperature Sensing Terminations

This month's cover features temperature sensing terminations that combine high performance RF terminations and RF sensors in one package
Temperature Sensing Terminations Florida RF Labs Inc. Stuart, FL In normal operation, most terminations never see high power. They terminate circulators and couplers, which in normal operation transmit little or no power to the termination. Whenever power is being dissipated in a termination, it is usually a sign that...
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A Fiber-optic-based Programmable Delay Line

A programmable delay line that provides six bits of true time delay from 0 to 12.6 µs in 200 ns steps over the 4 to 4.5 GHz frequency range
A Fiber-optic-based Programmable Delay Line Princeton Electronic Systems Inc. (PES) Princeton, NJ An important application of optoelectronic devices in microwave signal processing is optical delay lines. Optoelectronic devices with wide bandwidth, high dynamic range and small size play a crucial role in the performance improvement of signal processing systems....
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DC to 110 GHz Measurements in Coax Using the 1 mm Connector

A look at the 1 mm connector design, the proper connection technique and examples of how 1 mm connectors allow good ultrabroadband performance
DC to 110 GHz Measurements in Coax Using the 1 mm Connector The 1 mm coaxial connector was designed to provide an enabling technology for test systems that work up to 110 GHz. It was introduced as an open standard to the RF and microwave industry through the IEEE...
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Technologies for Wireless Applications: Past, Present, and Future

A summary of this special section containing articles based on papers originally presented at the IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications held in Vancouver, BC, Canada in February
Technologies for Wireless Applications: Past, Present, and Future Peter Staecker Microwave Journal Guest Editor This special section contains articles based on papers originally presented at the IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications held in Vancouver, BC in February in conjunction with INTER COMM® '99. The...
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Characterization of a Double-doped Power HJFET for W-CDMA Cellular Handset Application

A double-doped power heterojunction FET (HJFET) suitable for wideband CDMA (W-CDMA) handset transmitter applications that demand high linearity and high power-added efficiency
Characterization of a Double-doped Power HJFET for W-CDMA Cellular Handset Application Demands on next-generation wideband CDMA (W-CDMA) handset transmitters (and thus power devices) include high linearity and high power-added efficiency (PAE) under low voltage supply. A power heterojunction FET (HJFET) has been developed for such applications, achieving a high...
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Planar Integrated Antenna Technology

A discussion of the flexibility of planar antennas, including the various classes and their design names
Planar Integrated Antenna Technology Over the last several decades, the development of planar antenna technology has fundamentally changed the microwave and millimeter-wave communication fields. Planar antennas can be printed on dielectric substrates with minimal cost and processing. In many applications, these compact and low profile antennas offer an inexpensive...
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Correlation between Ungated Recess Width and Linearity of GaAs MESFETs

Insight into a critical device parameter for optimum performance of high efficiency linear power amplifiers
Correlation between Ungated Recess Width and Linearity of GaAs MESFETs Intermodulation distortion and adjacent-channel power ratio (ACPR1) performance of GaAs MESFET discrete and MMIC power amplifier (PA) devices has been found to be dependent on the width of the ungated recess. Devices with wide ungated recess exhibit soft gain...
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Indium Phosphide Heterojunction Bipolar Transistor Technology for Future Telecommunications Applications

How indium phosphide heterojunction bipolar transistor (HBT) technology fits into next-generation telecommunications applications and the business paradign that can enable it to achieve the same commercial success as GaAs HBT technology
Indium Phosphide Heterojunction Bipolar Transistor Technology for Future Telecommunications Applications Kevin W. Kobayashi, Aaron K. Oki and Dwight C. Streit TRW Inc., Space & Electronics Group Redondo Beach, CA Over the past decade there has been a significant shift in the microwave and millimeter-wave industry from space and defense...
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LTCC-M: An Enabling Technology for High Performance Multilayer RF Systems

An improved low temperature cofired ceramic on metal (LTCC-M) technology in which a specially formulated multilayer ceramic structure is attached to a metal carrier or core
LTCC-M: An Enabling Technology for High Performance Multilayer RF Systems B. Geller, B. Thaler, A. Fathy, M.J. Liberatore, H.D. Chen, G. Ayers, V. Pendrick and Y. Narayan Sarnoff Corp. Princeton, NJ Over the last several years, the highly competitive wireless market has pushed manufacturers of RF hardware toward the...
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