advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

Industry News

M2 Global Expands San Antonio Offices

In the world of high technology communications and specialized national defense contractor requirements, San Antonio's M2 Global truly impacts the global market. Its new headquarters expansion is just one sign of big things to come for M2 and the San Antonio community. The new 25,000-square-foot facility is located at...
Read More

Modelithics and ATC Announce Availability of Global Models

Modelithics™ and American Technical Ceramics Corp. (ATC), a manufacturer of high performance electronic components, including capacitors and thin film circuits for a broad range of commercial and military applications, previously announced a collaboration to develop substrate-scalable models for a wide variety of ATC’s RF/microwave and Hi-Power passive components. The...
Read More

AR Worldwide Announces New CEO and Several Organizational Changes

Donald “Shep” Shepherd, founder and president of AR Worldwide RF/Microwave Instrumentation , has announced the appointment of Jim Maginn to chief executive officer along with a series of organizational changes and promotions. As of May 8th, 2006, Jim Maginn assumed the CEO position, leaving AR Worldwide founder and president...
Read More

Anritsu Saves 4-6 Week PCB Re-spin by Thermal Modeling

Anritsu Co. has reduced the time required to develop communications test solutions 4 to 6 weeks, eliminating a printed circuit board (PCB) re-spin by modeling thermal management at the board and systems level during the early design process. In the past, Anritsu engineers were not able to address thermal...
Read More

Locus Features X-band Low Noise Amplifier

The Locus Microwave L61000 series high performance X-band low noise amplifier (LNA) is available in a variety of premium noise temperatures including 40K and 45K. This unit is intended for indoor or outdoor environments with custom, ruggedized packaging options to fit the customer’s needs. The L61000 series features an...
Read More

AWR and Vector Fields Partner

Applied Wave Research Inc. (AWR®), a provider of high frequency electronic design automation (EDA) tools, and Vector Fields Ltd. announced at the 2006 IEEE MTT-S International Microwave Symposium that they have integrated Vector Fields’ Concerto™ three-dimensional (3D) electromagnetic (EM) modeling software into AWR’s Microwave Office® circuit design platform. Vector...
Read More

Fairchild’s 4x4 mm Dual-band PA Saves Space, Extends Range in WLAN Applications

Building upon its portfolio of WLAN power amplifiers (PA), Fairchild Semiconductor introduces the FMPA2151, a highly integrated dual-band WLAN power amplifier module optimized to increase performance and reduce PCB board footprint in the latest 802.11a/bg WLAN applications, including notebooks, digital cameras and portable handsets. The high performance FMPA2151 offers...
Read More

IRC's Microwave Chip Resistors Perform At Frequencies Up To 40 GHz

Providing design engineers with a rugged resistive device specifically designed for transmission line termination at high frequencies, TT electronics IRC Advanced Film Division has developed a microwave/RF termination resistor rated for operation at frequencies up to 40 GHz. Designated the MWR series, the microwave chip resistor is constructed using...
Read More

SUSS MicroTec Introduces the IZI Probe® Card

SUSS MicroTec AG has announced the newest member of its renowned IZI Probe ® family, the IZI Probe Card. This new solution integrates the unique IZI Probe technology into an RF probe card specifically designed for production test. As RF and microwave devices become more complex and their operating...
Read More

RFMD® Introduces GaN High Power Transistors

RFMD ® introduced a family of Gallium Nitride (GaN) high electron mobility transistor (HEMT) high power transistors and is sampling to top-tier cellular infrastructure and WiMAX base station customers. The sampling of these transistors represents the achievement of a baseline 0.5 um GaN high power transistor process by RFMD....
Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement