Industry News

AMETEK acquires VTI Instruments

AMETEK Inc. has acquired VTI Instruments, a leading manufacturer of high-precision test and measurement instrumentation, for $74 million.  VTI, acquired from an investor group led by Merit Capital Partners and Alerion Capital Group, has annual sales of approximately $38 million. 


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RFMD earns Samsung's quality grand award as best quality supplier

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that Samsung has presented RFMD with its Quality Grand Award at a ceremony held last week at Samsung Electronics' smartphone manufacturing operations in Gumi, South Korea. The award recognizes RFMD's superior execution in product quality and customer satisfaction and was presented to RFMD on behalf of its Cellular Products Group (CPG) team. 


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Honeywell, Inmarsat finalize avionics design to bring faster in-flight connectivity to the world

The goal of delivering ‘home equivalent’ high-speed, consistent wireless internet connectivity for passengers and pilots on aircraft came a step closer today. In a joint announcement, Honeywell and Inmarsat confirmed that they have finalised the critical design review (CDR) of the GX Aviation aircraft avionics on schedule. It is anticipated that product certifications will be achieved later this year, followed by product introduction which is expected during the first half of 2015. 


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EDI CON 2014 Papers Focus on RF GaN Technology

The EDI CON 2014 technical sessions and workshops will feature numerous papers on the current state of Gallium Nitride (GaN) transistor technology, GaN-based RF power amplifiers and their design and use in various applications. GaN has emerged as the technology of choice for many new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare applications. This III-V semiconductor material is being quickly adopted for systems that will benefit from its high power density of about 5 to 12 W/mm, broadband characteristics (due to its high output impedance) and its ability to dissipate heat from a small package. Furthermore, GaN has high breakdown voltages levels and features typical transistor fTs up to 200 GHz, allowing these HEMT (high electron mobility transistors) to amplify signals well into the upper-gigahertz ranges. The presentations will be complemented by the participation of GaN device manufacturers such as RFHIC, NXP, DYNAX, Freescale and others in the event’s vendor exhibition. 


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