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Industry News

A Fast Responding 60 dB Log Amplifier for Microwave Applications

Modern wireless transmitters generally incorporate circuitry that directly or indirectly measures and regulates transmitted power. There are a number of reasons for this. Cellular standards such as WCDMA, CDMA2000 and GSM/EDGE demand that both base station and handset power be tightly controlled so that spectral leakage into adjacent channels...
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A Compact RFID Reader Platform for UHF and Microwave Applications

A new line of compact RFID readers has been developed for UHF and microwave applications worldwide. WJ’s model SX2000 is the first in a series of compact EPC Class 1 RFID readers whose size and performance are enabling new RFID applications. The SX20xx RFID reader platform — only 3.37"...
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An Interface Providing Web-based Control of Microwave Power Amplifiers

The ubiquitous IEEE 488.2 interface has served the instrumentation industry well for many years, and will probably do so for many more to come. However, in order to offer considerably more customer choice for the mundane yet important task of instrument interfacing and to exploit emergent interface technologies, Milmega...
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A Low Noise Amplifier IC for 400 MHz to 2 GHz Applications

Key considerations when considering low noise amplifiers (LNA) for mobile applications include small dimensions, and low voltage operation and current consumption, allied to excellent electrical performance. Designed to meet these criteria is a new LNA based on the uPC8211TK IC that can be matched with external passive components for...
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A New Large-signal Model for a Pulse-doped GaAs MESFET

Advances in GaAs MESFET technology require accurate large-signal MESFET models to correctly predict the circuit performance of power amplifiers and oscillators utilized in RF applications and communication systems. New devices such as PHEMTs and pulse-doped MESFETs utilize a concentrated carrier region in the active layer. This leads to more...
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Amplifier Design Using a λ/4 High Impedance Bias Line with a Defected Ground Structure (DGS)

In this article, a new -/4 bias line, combined with a dumbbell shaped defected ground structure (DGS), is proposed to suppress harmonics in power amplifiers. The proposed bias line maintains the required high impedance after the DGS is inserted, while ...
Recently, extensive research efforts on photonic band gap (PBG) structures where periodic patterns are etched on the ground plane of microstrip lines have been conducted for microwave circuit applications. 1–4 The applications of PBG for power amplifiers, filters and mixers have been reported. A defected ground structure (DGS), which...
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High Efficiency Power Amplifier Driving Methods and Circuits: Part I

Use of a low frequency active device model in the analysis of high efficiency power amplifier methods and circuits
A considerable research effort has been invested to optimize the efficiency of high frequency power amplifiers. The work has been focused on output load network design for high frequency active devices. However, the attention received by the driving waveforms and input circuits has been quite low compared to that...
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Simulation and Measurement of a C-band Low Noise Dielectric Resonator Oscillator

The design, construction and optimization of a C-band dielectric resonator oscillator (DRO) is described and investigated. The resonator was characterized separately by mounting it on a 50 Ω microstrip line, and fitting an equivalent circuit to th...
Microwave oscillators form an important part of all microwave systems, such as those used in radar, communication links, navigation and electronic warfare. 1 Oscillators are required to have excellent frequency stability against variations in temperature, power supply voltage and oscillator loading (load pulling). They also need a power output...
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A Temperature-compensated Closed Loop Overdrive Level Controller for Microwave Solid-state Power Amplifiers

The reliability of GaAs power FETs used in solid-state power amplifiers (SSPA) is adversely affected when operated in an overdrive (excess input power) condition for a long time due to excess gate current. Manufacturers of SSPAs use different schemes to protect the FET power devices from overdrive conditions. One...
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High Efficiency, High Power WCDMA LDMOS Transistors for Base Stations

OEMs, operators and manufacturers of base station RF power amplifiers are constantly striving for greater efficiency, whether it be in the number of connections (calls) that can be made via a base station or the amount of DC power needed to make those calls. For both scenarios, the RF...
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