Industry News

TEMWELL Introduces Four Tuning Helical Bandpass Filter

TEMWELL announced the company's four tuning helical bandpass filter is based on 15 years experience in design bandpass filter. It satisfies high attenuation, broadband needs (BW=100M up), insertion loss of TEMWELL can also install the four tuning bandpass filter into a module filter. Provide SMA, N and F connector...
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MicroSD Offers New Approach to NFC

Mobile contactless payments and a wealth of other applications enabled by Near Field Communication (NFC) are coming to mobile handsets over the next 12 months, but not in the format originally envisioned. A lack of commercially available NFC-embedded handsets combined with the rise of mobile handsets with microSD slots...
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NXP, Transim and AWR Partner to Launch SimPort Design Center

AWR® , Transim Technology and NXP Semiconductors announced the launch of the NXP SimPort Design Center for the online design exploration of NXP’s small signal RF transistors. The SimPort Design Center provides a variety of online design solutions across NXP’s product portfolio and now features an “interactive datasheet” for...
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Microsemi Announces High Efficiency High Power MOS 8 IGBT

Microsemi Corp. , a manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, has announced a new high efficiency, high power Insulated Gate Bipolar Transistor (IGBT) based on its latest MOS 8™ technology platform. The new IGBT has been optimized for lower frequency operation (10...
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RFMD Expands Foundry Services Offerings

RF Micro Devices Inc. (RFMD) announced the company has added high power Integrated Passive Component (IPC) technology to RFMD's foundry services portfolio and will begin providing IPC technology to customers of its Foundry Services business unit in June of this year. RFMD's IPC technology is complementary to its GaN...
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RFMD Announces Second GaN Process Technology Qualification

RF Micro Devices Inc. (RFMD) announced the successful qualification of the company's second high-power Gallium Nitride (GaN) process technology, expanding the company’s industry-leading portfolio of compound semiconductor technologies. RFMD’s second high-power GaN HEMT process technology (GaN2) achieves 1 to 2 dB higher gain and 6 dB greater linearity than...
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RFMD Showcases Portfolio of RF Components

RF Micro Devices Inc. (RFMD) announced the company will showcase its broad portfolio of industry-leading RF communications components at the IEEE International Microwave Symposium (IMS), to be held May 25-27, 2010, in Anaheim, CA. During the conference, RFMD will host in-booth demonstrations of the company’s high-power gallium nitride (GaN)...
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