Industry News

The Book End

Introduction to Communication Electronic Warfare Systems; Second Edition Richard Poisel Focusing mainly on the engineering aspects of communications electronic warfare (EW) systems, this thoroughly updated and revised edition of a popular Artech House book offers a current and complete introduction to the subject. The second edition adds a wealth...
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Career Corner

Making a Connection Most studies find that 60 to 70 percent of jobs are found via networking and not through the normal job posting and application process. In addition, there are a number of jobs that are never posted on web sites or advertised as they are filled directly...
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The Puzzler - October 2009

Amplifiers, Oscillators and Government Electronics Download the Puzzler Download the Puzzler (PDF) Across 2 The frequency interval from 1 to 2 GHz (hyphenated) 4 802.16e (2 words) 8 The matching of the modulation, coding and other signal and protocol parameters to the conditions on the radio link (2 words)...
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WIN Semiconductors Announces Process Design Kit

AWR and WIN Semiconductors Corp. (WIN) announced the release of the WIN/AWR H2W PH50-00 process design kit (PDK). The PDK for the WIN PH50-00 GaAs enhancement/depletion-mode pseudomorphic high electron mobility transistor (PHEMT) and heterojunction bipolar transistor (HBT) foundry process is the latest in AWR’s series of PDKs available to...
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Cobham Sensor Systems to Relocate Manufacturing, Research and Development Operations

Cobham Sensor Systems will relocate its manufacturing, research and development operations from Roanoke to the Technology Manufacturing Building in the Blacksburg Industrial Park. Cobham acquired M/A-COM’s defense business in 2008, including the Roanoke facility, and will lease 50,000-square-feet of office, laboratory and manufacturing space. The move is expected to...
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Tower and Jazz Announce Deep-Silicon-Via Technology

Tower Semiconductor Ltd. and its US subsidiary, Jazz Semiconductor , announced the availability of its proprietary Deep-Silicon-Via™ (DSV) technology available in its 0.18-micron SiGe BiCMOS (SBC18). The new offering provides a simpler, more innovative way to create a low-inductance ground required to reduce power consumption of power amplifiers (PA)....
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