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Voltage-controlled Oscillator The RP-148258-01 model is designed to meet the stringent performance requirements of the aerospace industry. This model is compliant with MIL-PRF-38534 specification essential to high reliability, military and space applications. The operating frequency range is 1420 to 2500 MHz with an operating temperature range of -40° to...

Right Angle Adapters The UG-27 C/U is a right angle adapter that features solderless construction. The solder-free construction offers dependability equal to a straight plug while achieving 90° bends. The solder-free adapters also address RoHS compliancy issues by reducing lead content. The 50 ohm UG-27 C/Us perform efficiently up...

Material RFID Tag MetalTag™ Impact is a Read-on-Metal EPC Gen 2 RFID tag. MetalTag Impact is constructed of a ruggedized outer coating, using a patented elastomer with a robust exoskeleton. The tag is ideal for challenging environmental conditions, such as severe weather, wide temperature variations, direct and prolonged UV...

MWJ: What are the most significant benefits of GaN/LDMOS/HVFET? How does this compare to other high power devices?   RFMD: GaN based amplifiers provide the following significant benefits 1)       Higher efficiency for pulsed, CW saturated and linear applications which improve thermal requirements and energy usage.   GaN is...

  MWJ:   What are the most significant benefits of GaN/LDMOS/HVFET? How does this compare to other high power devices?   Nitronex: The most significant advantages of GaN over other power technologies are is its power density and high frequency response. Having several times higher power density results in...

MWJ: What are the most significant benefits of LDMOS?   Freescale: • LDMOS has the lowest cost per watt ($/W) ratio of any of the high power RF amplifier technologies. • LDMOS has some of the best Class-AB linearity, gain, reliability, and thermal resistance numbers of any of the popular RF power...

MWJ:   What are the most significant benefits of HVVFET™? How does this compare to other high power devices? HVVi: The benefit of designing high power devices using a high voltage breakdown technology and a vertical device structure is high power density. The resulting power device is housed in...

MWJ: What is the potential of GaN/LDMOS/HVFET technology in mobile radio communication systems. What are the most significant benefits of GaN/LDMOS/HVFET? NXP: NXP is the company that develops both LDMOS and GaN technology. LDMOS is today’s technology of choice for base station, broadcast and radar applications. Being technology leader,...

Among the changing landscape of RF/microwave semiconductor developments, devices with material properties that can sustain high electric breakdown are of particular interest.  Within the last six-months alone, the Journal has published over a dozen papers on Laterally Diffused MOS (LDMOS), gallium nitride (GaN), silicon carbide (SiC) SIT & MESFETs,...

Hittite Microwave Corp. , a supplier of complete MMIC-based solutions for communication and military markets, continues to expand its Power Detector product line to include an extensive range of industry-leading RMS Power Detectors, Logarithmic Detectors and SDLVAs that cover the entire 50 Hz to 20 GHz frequency range with...