Microwave Journal

HVVi Semiconductors to Deliver Two Presentations

October 27, 2008

HVVi Semiconductors Inc., a developer of silicon RF power transistors, will deliver two presentations at European Microwave Week, the leading conference in Europe for microwave, RF, wireless and radar technology. On Tuesday, October 28th, senior RF applications engineer Brian Battaglia will deliver a presentation on a revolutionary new architecture for RF power transistors entitled, “A Novel Silicon High Voltage Vertical MOSFET Technology for a 100W L-band Radar Application” (EuMC/EuMIC/EuWiT01-5). The presentation will begin at 3:10 p.m. local time in the RAI Centre in Amsterdam.

Two days later engineers at HVVi Semiconductor will host a poster session on phased-array radar applications. The computer-generated live presentation, entitled, “High Performance Vertical MOSFET Technology Enables Phased-array Radar Applications” (EuMCPoster04-5), will run from 12:30 to 2:00 p.m. local time on Thursday, October 30th. The company will also be exhibiting at the conference in booth 1413 on Tuesday, Wednesday and Thursday October 28 – 30th.

Tuesday’s discussion will focus on new solutions for 100 W L-band radar applications. While traditional silicon RF transistor technologies such as bipolar and LDMOS have served L-band radar system designers well, they have hit a ceiling in terms of performance. The presentation will explain these inherent challenges and describe a new silicon architecture that employs a High Voltage Vertical Field Effect transistor (HVVFET) to bring higher power through voltage.

In his discussion, Battaglia will discuss how this new technology dramatically improves frequency and power efficiency by reducing parasitics. Moreover, he will show how products can take advantage of the higher power density of the vertical transistor over the lateral transistor used in LDMOS to offer twice the power in the same package. The discussion will include results from sample designs.

Thursday’s computer-generated poster session will review how the HVVFET architecture simplifies the development of a wide variety of phased-array radar applications.