Microwave Journal

10 W, 32 to 40 GHz, GaAs FET Power Amplifier

Solid-State High Power Module: AMP3060

April 13, 2017

Exodus Advanced Communications has introduced its latest solid-state high power module, the AMP3060. This linear, GaAs FET hybrid, Class AB design provides 10 W output across 32 to 40 GHz, with a minimum power gain of 40 dB and 4 dB peak-to-peak maximum flatness when driven with a constant maximum input power of 0 dBm. The AMP3060 is suitable for EMI/EMC susceptibility, millimeter wave component testing, electronic warfare, Ka-Band satellite and general communications applications. 

The high power module, which measures 5.51" × 6.89" × 0.98", requires a nominal +9 VDC bias and draws 37 A maximum current. The amplifier is also available in a standard 19" rack-mounted chassis configuration with self-contained air cooling and AC operation. An optional controller with a front panel touch screen LCD supports Ethernet TCP/IP, RS422 or RS485 and, upon request, remote Bluetooth connectivity.

Exodus Advanced Communications develops and manufactures solid-state RF power amplifiers (PA) covering various frequency bands from 100 kHz to 47 GHz, with module output power greater than 1 kW and complete systems exceeding 10 kW. Other standard products include a family of 10, 20 and 40 W PAs over 6 to 18 GHz and PAs up to 250 W over 2 to 6 GHz.  Exodus PAs integrate discrete LDMOS, GaAs and GaN devices with ceramic substrates using hybrid chip-and-wire assembly processes. In-house capabilities include RF circuit design; system mechanical, electrical and digital circuit design; control software development and prototype verification.

Exodus Advanced Communications
Las Vegas, Nev.