Microwave Journal

Cree RF GaN-on-SiC Foundry Process & Product Capabilities

Featured Video

April 4, 2014

Cree, Inc. is a market-leading supplier of GaN HEMT power transistor devices for wireless communications for applications ranging from DC to millimeter wave. As the leader in GaN-on-SiC technology, Cree provides design engineers with a proven foundry process for producing highly-reliable GaN HEMT MMIC devices with a high rate of first-pass success and improved yields. Cree provides design assistance, advanced layout tools, robust design rule checking (DRC), proven model support, and testing services to enable customers to achieve first-pass design success for their high-power, high-efficiency MMIC devices.