Microwave Journal

AMPLIFIERS

November 1, 1997

AMPLIFIERS

Laboratory and Special-purpose Amplifiers
These laboratory and special-purpose amplifiers offer variable and automatic gain control; input-limiting protection; rack and remote mounting; power supply integration with cooling fans; phased and amplitude matching or tracking between units; tower-top applications; and detector and temperature sensing outputs. The model ACAM-7910 laboratory power amplifier operates from 1000 to 2000 MHz with gain of 27 dB, flatness of +/-1 dB, power output at 1 dB compression point (P1dB) of 40 dBm and IP3 of +52 dBm. The model ACAM-7517 narrowband low noise amplifier operates at a center frequency of 1575 MHz with gain of 40 dB and a noise figure of 2.5 dB.
Advanced Control Components Inc.,
Eatontown, NJ (732) 460-1212.

Masthead GSM Amplifier System
The PowerTop™ PCS power transmit and low noise receive masthead amplifier system for use in conjunction with a low power Global System for Mobile communications (GSM) microcell increases downlink power to 20 W. Typical applications include highways, where relatively low capacity, wide area coverage is required. Transmit path gain is conveniently adjustable to match site requirements. The uplink receive path noise figure is 2.5 dB (max). Several optional configurations are available.
AML Communications,
Camarillo, CA (805) 388-1345, ext. 215.

1 to 18 GHz Microwave Amplifiers
These microwave amplifiers are designed for electromagnetic compatibility (EMC) test applications requiring instantaneous bandwidth and high gain. The 500 and 1000 series broadband, TWT microwave amplifiers offer up to 500 and 1000 W minimum power, respectively, across a frequency band from 1 to 18 GHz. The units offer frequency responses of 1 to 2.5 GHz, 2.5 to 7.5 GHz and 7.5 to 18 GHz. The amplifiers will not shut down when subjected to extreme-load SWR conditions; the units reduce output automatically during severe load mismatches and resume full-power operation when the mismatch conditions cease. Front-panel digital displays show forward and reflected output as well as an extensive menu of system status data. Standard features include a built-in IEEE-488 (general-purpose interface bus) interface, gain control, SWR protection, a 0 dBm input and an RF sample output port.
Amplifier Research,
Souderton, PA (215) 723-8181.

DC - 6 GHz GaAs MMIC Amplifier
The model AHB108C MMIC heterojunction bipolar transistor amplifier is designed for use as a general-purpose, 50 W gain block. External DC blocking capacitors determine the low frequency response, and an external bias resistor provides bias voltage flexibility. The device provides gain of 13 dB at 1 GHz, an RF range of DC to 6 GHz, IP3 of 34 dBm at 1 GHz, P1dB of 20 dBm at 1 GHz and noise figure of 5.7 to 6.1 dB.
Frequency Electronics Inc.,
Mitchel Field, NY (516) 794-4500.

AMPS GaAs MMIC Amplifier
The model FMM 5512ZE GaAs MMIC amplifier is designed for Advanced Mobile Phone Service (AMPS) use and eliminates the dual-supply requirement of phone manufacturers using high performance GaAs products. With fewer components necessary (no need for a drain switch or negative voltage generator) the phones feature lower overall manufacturing costs while maintaining product performance.
Fujitsu Compound Semiconductor Inc.,
San Jose, CA (408) 232-9500.

2 to 18 GHz Broadband Amplifiers
These ultra-broadband amplifiers feature multi-octave coverage with screening for airborne, shipboard, or ground-based designs, including threat simulators, training systems and field use. The model JCA218-401 operates from 2 to 18 GHz featuring a minimum gain of 30 dB, noise figure of 5 dB (max), gain flatness of +/-2 dB (max), input/output SWR of 2 and power output of +10 dBm (min) at P1dB. Optional configurations include alternate gains, limiting amplifiers, temperature compensation and higher dynamic ranges.
JCA Technology Inc.,
Camarillo, CA (805) 445-9888.

Broadband Pulse Amplifier
The model LA22-01-01 intermediate power broadband amplifier is designed for 2.5 Gbps telecommunications and other applications where good response to fast pulses is required. Typical performance parameters include a bandwidth of 30 kHz to 8 GHz, gain of 22 dB, P1dB of 19 dBm, and rise and fall times of 60 ps.
LA Techniques Ltd.,
Tolworth, Surrey, UK +44 1522 791244.

120 W UHF Broadband Amplifier
The model 500-100-120-35 120 W high power amplifier operates from 100 to 500 MHz and features low harmonics over an operating temperature of –50° to +80° C. The amplifier is designed for use in wireless communications, radar, mobile communications, EMI/EMC, and other military and commercial applications. The unit is available as an amplifier module or in a rack-mount system and offers a CW power output of 120 W, gain of 35 dB, efficiency of 35 percent and input/output impedance of 50 W (nom). Size: 6" x 2" x 1" (module); 19" (rack-mount system). Price: $2595 (module); $5950 (rack-mount system).
LCF Enterprises,
Camarillo, CA (805) 388-8454.

20 W Power Amplifier Module
The model RHPA1516-20 high power, high efficiency 20 W power amplifier module is designed for use in communication systems. The module utilizes a single-stage GaAs MMIC power amplifier, which was fabricated using the company's advanced power psuedomorphic high electron mobility transistor process. The unit features 20 W CW power output with 60 percent efficiency and 13 dB of power gain, and operates in a 50 W input/output system.
Raytheon Microelectronics,
Andover, MA (508) 470-9502.

Multichannel Power Amplifier
The 100 W linear multichannel amplifier for digital and analog cellular applications utilizes feedforward correction techniques to achieve ultra linearity. The unit enables amplification of multiple RF carriers of channels simultaneously. The amplifier operates in the 869 to 894 MHz or 925 to 960 MHz frequency ranges with IM distortion of –70 dBc.
MPD Technologies Inc.,
Hauppauge, NY (516) 231-1400.

UHF Power Amplifier
The model THU50 class A, 50 W RF power amplifier is designed for use in UHF television transmission, 470 to 860 MHz solid-state amplification or as a driver for high power tubes. The amplifier features 10 dB gain and two-tone IM distortion of –54 dBc. Size: 2.4 x 4.0". Delivery: stock.
Richardson Electronics Ltd.,
LaFox, IL (800) 348-5580 or (630) 208) 2200.

High Performance Low Noise Amplifier
The model SM-515101 RFIC amplifier operates over the 2.1 to 2.7 GHz frequency range in wireless local loops, wireless cable or Part 15 systems. The unit offers a noise figure of 1.4 dB (typ), associated gain of 23 dB, output IP3 of +20 dBm and reverse isolation of 45 dB. The amplifier is designed to operate from a single supply voltage range of +3.6 to 5 V and is supplied in an eight-lead SOIC package. Price: $2.93 (10,000).
Samsung Microwave Semiconductor,a division of Samsung Semiconductor Inc.,
Milpitas, CA (408) 433-5079.