Microwave Journal

TriQuint’S new GaN transistors deliver superior gain, can reduce amplifier size 50%

October 29, 2012

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.

TriQuint’s new GaN transistors deliver RF output power from 30-37W (CW) over operating frequencies as broad as DC to 6 GHz. They are excellent choices for applications ranging from commercial and defense radar to communications, test equipment, electronic warfare and similar broadband systems.

TriQuint’s new GaN power transistors include the 28V T1G6003028-FS that operates from DC to 6 GHz and delivers 30W output power with efficiency of 55% at 3.5 GHz and 44% at 6 GHz. The T1G6003028-FL delivers the same performance and is offered in a flanged package to satisfy these assembly requirements. TriQuint’s new 32V T1G4003532-FS and the flanged-package T1G4003532-FL are ideal for S-band radar and similar applications. They deliver 37W (CW) output power from DC to 3.5 GHz. Both devices provide more than 16dB of gain at 3.5 GHz and 10dB of gain at 6 GHz; their power-added efficiency is 60% at 5 GHz and 49.6% at 6 GHz.

All four new GaN transistors can withstand output impedance (VSWR) mismatches up to 10:1 without functional damage and are optimized for operation at high drain bias conditions, reducing system cost and thermal management overhead. All devices are exportable to most countries; check with TriQuint for details.

TriQuint’s latest GaN transistors are being released at European Microwave Week (EuMW) in Amsterdam. Visit TriQuint in Booth 311 or request a meeting with our representatives to review benefits of GaN transistor technology and your design requirements. TriQuint is also introducing four new SAW diplexers for GPS applications that reduce package size nearly 3 times compared to ceramic filters, and four packaged GaAs pHEMT RF power amplifier modules designed around the latest manufacturing requirements including multi-layer PCB designs.

In addition to introducing 12 new products at EuMW 2012, TriQuint will present new radar and sensing technology solutions in the European-focused ‘Defence, Security and Space Forum.’ The Forum will be held on October 31 in the main auditorium of the RAI Center starting at 8:30 AM (CET). The presentation is a special track within EuMW and focuses on new GaN products and integrated assemblies. Admission is free.

Technical Specifications – New TriQuint GaN Transistors:

T1G6003028-FS

DC-6 GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flangeless package.

T1G6003028-FL

DC-6 GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flanged package.

T1G4003532-FS

DC-3.5 GHz GaN RF power transistor: 37W CW; more than 16dB gain at 3.5 GHz; 10dB gain at 6 GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99 flangeless package.

T1G4003532-FL

 DC-3.5 GHz GaN RF power transistor: 37W CW, more than 16dB gain at 3.5 GHz; 10dB gain at 6GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99; flange mount package.


Contact product marketing for samples and evaluation boards. Visit TriQuint on the web, or contact Sales for a representative in your area.