Microwave Journal
www.microwavejournal.com/articles/18291-richardson-rfpd-introduces-30-w-gan-power-amplifier-from-triquint

Richardson RFPD introduces 30 W GaN power amplifier from TriQuint

September 20, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities of a new 30 W GaN power amplifier from TriQuint Semiconductor Inc. (TriQuint).

The TGA2576-FL is a packaged wideband power amplifier fabricated on TriQuint's production-released 0.25 µm GaN on SiC process. Operating from 2.5 GHz to 6 GHz, the device achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain. Fully matched to 50 ohms and with integrated DC blocking caps on both I/O ports, the TGA2576-FL is ideally suited to support both commercial and defense related applications.

Key features of the TGA2576-FL include:

  • Frequency Range: 2.5 to 6 GHz
  • Psat: 45.5 dBm @ Pin = 26 dBm
  • PAE: 35%
  • Small Signal Gain: 26 dB
  • Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical
  • Dimensions: 11.4 x 17.3 x 3.0 mm

To find more information, or to purchase this product today on the Richardson RFPD website, please visit the TGA2576-FL webpage. It is also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional GaN products from TriQuint, please visit the TriQuint GaN Tech Hub. For all TriQuint products, please visit the TriQuint Storefront webpage.

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