Three Power Amplifiers: RFPA1002, 1003, and 1702
RFMD expands high-frequency product portfolio with high-performance power amplifiers for point-to-point radio market.
RF Micro Devices, Inc. a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the introduction of three new power amplifiers for high-frequency point-to-point radio applications. RFMD's RFPA1002, RFPA1003, and RFPA1702 deliver >1 W RF output power in the 10 to 20GHz frequency bands and expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets.
By delivering exceptional power output, linearity and gain, RFMD's RFPA1002, RFPA1003, and RFPA1702 help to satisfy the increasing capacity and performance requirements of next-generation point-to-point radio systems. Each of the high-frequency gallium arsenide (GaAs) PAs is packaged in a 6x6 mm QFN, combining low-cost packaging with industry-leading electrical performance.
In addition to the point-to-point radio market, the RFPA1002, RFPA1003, and RFPA1702 are ideally suited for satellite communications, military radar, and electronic warfare applications. RFMD's expanding portfolio of microwave radio chipsets also includes upconverters, downconverters, VCOs, and gain blocks.
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