HMC755LP4E Power Amplifier
January 17, 2011
New Power Amplifier is Ideal for WiMAX and LTE/4G Application. New Surface Mount PA Features High Efficiency and Low EVM.
Chelmsford, MA, March 26, 2010 – Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, announces the release of a new GaAs InGaP HBT MMIC power amplifier which is ideal for automotive, broadband, WiMAX and LTE/4G applications from 2.3 to 2.8 GHz.
The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power Amplifier which rated from 2.3 GHz to 2.8 GHz and provides up to 31 dB of gain. This high efficiency amplifier operates from a single +5 V supply, and achieves 28 % power added efficiency (PAE) at +33 dBm of saturated output power. Three power control pins can be used to reduce the RF output power of the PA, or for full power down of the amplifier to conserve DC power. The integrated output power detector pin (VDET) is internally coupled and provides excellent measurement accuracy while requiring only a single external decoupling capacitor. With an OFDM output power of +25 dBm (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5 %, making it ideal for WiMAX and LTE/4G applications. This high performance amplifier is packaged in a compact 4 x 4 mm QFN SMT package, requires a minimum of external matching components, and is rated for operation from -40 °C to +85 °C.
Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available at our website by clicking the link below our logo on this page.