Microwave Journal

Microsemi Expands Support for Designers Developing High Power RF Generators

June 23, 2011

Microsemi Corp., a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, announced a design guide for developing next-generation high voltage, high power systems based on the company's unique digital radio frequency (DRF) family of hybrid modules. These systems are used in applications including semiconductor processing, LCD glass coating, solar cell manufacturing, optical device and architectural glass coating, hazardous gas treatment, CO2 laser excitation, MRI RF amplifiers, RF scalpels and induction heating systems.

The modules combine RF driver ICs and power MOSFETs in a single, high-performance package capable of delivering 1 to 3 kilowatts (kW) of power at frequencies up to 40 megahertz (MHz). The design guide also provides system developers with RF design techniques related to component selection, matching network design, output power optimization, efficiency maximization, cooling and packaging, as well as detailed recommendations related to circuit topologies required for building a complete RF generator.

"Our DRF product suite delivers substantial benefits as compared to conventional low-voltage RF systems," said Glenn Wright, Director of Marketing, MOSRF products, at Microsemi. "These benefits include the ability to solve difficult design challenges to reduce system size, increase power density, improve reliability and reduce overall system cost for a variety of industrial, scientific and medical applications."

Microsemi's DRF product family combines up to two RF drivers ICs, two RF power MOSFETs and associated decoupling capacitors in a single package. The close proximity of the driver IC and MOSFET greatly reduces circuit inductance while improving performance as compared to alternative solutions using discrete components, and enables a variety of circuit configuration and system topologies. Designed to deliver continuous power, Class D and E, and pulsed-power applications, the modules are capable of launching up to 3 kW of RF power while requiring only 5 V logic level input signals. They also use Microsemi's unique flangeless packaging capability to reduce cost and improve performance as compared to alternative legacy solutions.