Microwave Journal

Cree Plans Demonstrations Of GaN Device Technology

May 26, 2011

Cree (Booth 1925) will be demonstrating its GaN-on-SiC MMICs and HEMTs at IMS 2011 in Baltimore. In addition to learning the latest advances in GaN device technology, Cree invites visitors play some ping pong in its booth.

Cree will be highlighting one of its newest products, CMPA5585025F. This is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

On Sunday, June 5, Cree is presenting at WSA: Introduction to GaN MMIC Design. Bill Pribble will present "GaN MMIC Design for Radar and Communications Applications."

On Tuesday, June 7, and Wednesday, June 8, Jeremy Fisher from Cree will demonstrate the AWR/Cree PDK at the AWR booth (1618). Both demonstrations will be at 3 PM.