Welcome to Microwave Journal's MTT-S International Microwave Symposium 2011 Show Coverage
June 5-10, 2011, Baltimore, MD
Welcome to this year's IMS Show Daily, Microwave Journal's coverage of the IEEE MTT-S International Microwave Symposium taking place June 5-10 in Baltimore, MD. The IMS Show Daily is your source for industry activity related to the conference and exhibition - before, during and after the event. Join us for exclusive conference information, news, social networking, photos, videos, and more. If you are not attending the show, stay informed with the IMS Show Daily and our online show coverage on the Microwave Journal home page.
Visit RFMD at IMS 2011, Booth 1402
RFMD® is a global leader in the design and manufacture of high-performance RF and microwave components and solutions. RFMD will showcase its industry-leading RF and microwave product portfolio for Point-to-Point Microwave Radio, WiFi, WiMAX, SmartEnergy AMI, ZigBee®, Wireless Infrastructure, Aerospace/Defense, Broadband Transmission, and General Purpose RF Product Applications.
Click here for RFMD at IMS 2011 information.
AR RF/Microwave Instrumentation: Solid-state Amplifier
The new solid-state microwave amplifier, model 175S1G4 operates in a frequency range from 0.8 to 4.2 GHz and has a power output of 175 W. This amplifier employs a new design that delivers more than twice the power of older models. The new, more efficient design consumes less power and incorporates both USB and Ethernet interfaces in addition to the standard IEEE and RS-232 interfaces.
See us in Booth 1103 at IMS 2011.
Hittite Microwave Corp.: Analog-to-Digital Converter
Hittite Microwave Corp. has introduced a new high speed analog-to-digital converter (ADC) product line. Hittite's multi-function ADC products are easy-to-use, exhibit ultra-low power dissipation and superior cost efficiency while maintaining high performance and complementing Hittite's existing RF, microwave and mixed-signal IC product lines.
See us in Booth 2009 at IMS 2011.
M/A-COM Technology Solutions: Six-bit Digital Attenuator
M/A-COM Technology Solutions Inc. introduced the MAAD-008866, a six-bit, 0.5 dB step digital attenuator for 75 Ohm systems operating up to 1 GHz. This attenuator is ideal when high accuracy, low power consumption (4 microAmps typical at 5 V, steady state) and low intermodulation products are required.
See us in Booth 1418 at IMS 2011.
RFMD: GaN Power Transistors
RFMD introduces the development of its GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor process, these high performance amplifiers show excellent peak drain efficiency and flat gain over a broad frequency range in a single amplifier design.
See us in Booth 1402 at IMS 2011.
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