M/A-COM Tech Asia introduced an 8.5 to 11 GHz gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) core chip, which consists of integrated transmit/receive switches, an LNA, a 6-bit phase shifter, a 5-bit attenuator and a driver amplifier. This core chip, identified as XZ1002-BD, features parallel data input and compensated on-chip gate bias and delivers 21 dB receive gain, 23.5 dB transmit P1dB and 28 dBm receive OIP3. The transmit amplifier also has a typical small-signal gain of 19 dB with excellent input and output match. The XZ1002-BD is well suited for both military and weather phased array radar applications and satellite communications systems.
"Our highly integrated X-band core chip combines four functions in one device, making a two-chip phased array radar T/R module a reality when matched with our XP1006 10 W power amplifier," said Peter J. Hales, Senior Director, M/A-COM Tech Asia. "With these two devices, active X-Band phased array and T/R module manufacturers can add an accurate, fast and inexpensive solution to their arsenal."
M/A-COM Tech Asia performs 100 percent on-wafer RF, DC and output power testing on the XZ1002-BD, as well as 100 percent visual inspection to MIL-STD-883 method 2010. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.