Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.
TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale Semiconductor Inc. (Freescale).
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corp. (Microsemi).
At the 2012 April ARMMS RF & Microwave Society Meeting, held near Oxford, UK, Robert Smith of Cardiff University and Stephen Russell of Glasgow University both received newly introduced Young Engineer Prizes, intended to recognise and encourage engineers beginning their career in RF & Microwave technology.