MACOM introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. They scale to peak pulse power levels of 100 W – the highest among competing components in this product category.
The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.
Richardson RFPD Inc. announces its attendance and participation at EDI CON 2013. EDI CON is an industry-driven conference/exhibition targeting RF, microwave, EMC/EMI, and high-speed digital design engineers and system integrators developing products for today's communication, computing, RFID, wireless, navigation, aerospace and related markets.
Richardson RFPD Inc. announces its participation and the line-up of suppliers and products it will feature at IIC China 2013, to be held at the Shenzhen Convention & Exhibition Center, Shenzhen, China, February 28 to March 2, 2013.
Richardson RFPD Inc. announces its sponsorship of a special expert forum discussing the state-of-the-art in Gallium Nitride semiconductor technology targeting high-power RF and microwave applications. This forum will be held at EDI CON 2013 in the Beijing International Convention Center, Beijing, China, March 12-14, 2013. As the sponsor, Richardson RFPD has assembled a panel of experts from leading suppliers of discrete transistors and integrated circuits based on GaN technology.
Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.
TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale Semiconductor Inc. (Freescale).