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Articles Tagged with ''transistors''
Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.
NXP Semiconductors has introduced the first transistors in a 1.1 mm by 1 mm by 0.37 mm low-profile discrete flat no-leads (DFN) package that boost current capabilities up to 3.2 A.
AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.
Richardson RFPD introduces high power GaN transistors in rugged, space-saving plastic packages from MACOM
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM Technology Solutions (MACOM).
MACOM introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. They scale to peak pulse power levels of 100 W – the highest among competing components in this product category.
The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.
Richardson RFPD Inc. announces its attendance and participation at EDI CON 2013. EDI CON is an industry-driven conference/exhibition targeting RF, microwave, EMC/EMI, and high-speed digital design engineers and system integrators developing products for today's communication, computing, RFID, wireless, navigation, aerospace and related markets.
Richardson RFPD Inc. announces its participation and the line-up of suppliers and products it will feature at IIC China 2013, to be held at the Shenzhen Convention & Exhibition Center, Shenzhen, China, February 28 to March 2, 2013.
Cree and Eta Devices to demo the world’s most efficient PA (70%+) for mobile base stations at the MWC 2013
Cree Inc. and Eta Devices Inc. will demonstrate the world’s most efficient reported power amplifier for mobile base stations at the 2013 Mobile World Congress, February 24-28 in Barcelona, Spain.