Ted Rappaport, founding director of NYU WIRELESS and a leading proponent of using the millimeter wave spectrum for wireless communications, discusses the FCC's recent rulemaking actions and technology developments that are paving the way to 5G.
Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, will be showcasing its products at EDI CON USA, taking place September 20-22, at the Hynes Convention Center in Boston, Mass.
MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced the newest entries in its MAGb series of GaN on Silicon power transistors for use in macro wireless base stations.
Qorvo Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.
M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high-performance analog RF, microwave, millimeter wave and photonic semiconductor products, will showcase a broad portfolio of new products for multi-market, aerospace, defense and networking applications at Booth # 321 at EDI CON 2015 in Beijing, China.
Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.