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Articles Tagged with ''transistors''

RFMW announces TriQuint's 30 W GaN Transistors to 3.5 GHz

April 18, 2014

RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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Richardson RFPD introduces 48 V GaN-on-Si RF power transistors from Nitronex

RFIC
November 20, 2013

Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.


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NXP introduces first 3 A transistors in 1.1 mm² leadless plastic package

November 4, 2013

NXP Semiconductors has introduced the first transistors in a 1.1 mm by 1 mm by 0.37 mm low-profile discrete flat no-leads (DFN) package that boost current capabilities up to 3.2 A.


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AWR and NXP release ultra-wideband Doherty amplifier reference design

October 10, 2013

AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.


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Richardson RFPD introduces high power GaN transistors in rugged, space-saving plastic packages from MACOM

September 18, 2013

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM Technology Solutions (MACOM).


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MACOM introduces highest power GaN in plastic transistor

RFIC
May 20, 2013

MACOM introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. They scale to peak pulse power levels of 100 W – the highest among competing components in this product category.


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Market for GaN and SiC semiconductors set to rise 18x from 2012 to 2022

April 30, 2013

The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.


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Richardson RFPD at EDI CON 2013

March 8, 2013

Richardson RFPD Inc. announces its attendance and participation at EDI CON 2013. EDI CON is an industry-driven conference/exhibition targeting RF, microwave, EMC/EMI, and high-speed digital design engineers and system integrators developing products for today's communication, computing, RFID, wireless, navigation, aerospace and related markets.


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Richardson RFPD announces IIC China 2013 line-up

February 22, 2013

Richardson RFPD Inc. announces its participation and the line-up of suppliers and products it will feature at IIC China 2013, to be held at the Shenzhen Convention & Exhibition Center, Shenzhen, China, February 28 to March 2, 2013.


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