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Articles Tagged with ''transistors''

MACOM extends GaN portfolio with new 15 W GaN on SiC pulsed power transistor

M/A-COM Technology Solutions
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 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT Pulsed Power Transistor for civilian and military radar pulsed applications. 


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BeRex adds new family of high performance MESFET chips

BeRex, Inc.
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 BeRex, Inc. announces the immediate availability of a new family of low phase noise, high linearity MESFET transistors to complement its popular line of pHEMT transistors. 


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Cree introduces highest power and frequency plastic packaged GaN transistors

Cree Inc.
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Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.


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Cree announces low cost extended bandwidth GaN HEMT transistors

Cree Inc.
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As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks.


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Richardson RFPD introduces five new GaN on SiC HEMT RF transistors from MACOM

Richardson RFPD Inc.
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Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).

 


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RFMW announces TriQuint's 30 W GaN Transistors to 3.5 GHz

RFMW Ltd.
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RFMW Ltd. announces design and sales support forwideband, DC-3.5GHz GaN transistors from TriQuint. Available as the T2G4003532-FS earless package or the T2G4003532-FL, both transistors are input prematched for S-band operation. The devices are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


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Richardson RFPD introduces 48 V GaN-on-Si RF power transistors from Nitronex

RFIC
Richardson RFPD Inc.
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Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.


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GaN Transistors for L-Band Commercial and Military Applications

Cree Inc., Research Triangle Park, NC
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NXP introduces first 3 A transistors in 1.1 mm² leadless plastic package

NXP Semiconductors
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NXP Semiconductors has introduced the first transistors in a 1.1 mm by 1 mm by 0.37 mm low-profile discrete flat no-leads (DFN) package that boost current capabilities up to 3.2 A.


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AWR and NXP release ultra-wideband Doherty amplifier reference design

AWR Corp.
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AWR Corp., the innovation leader in high-frequency electronic design automation (EDA), announces that NXP Semiconductor's ultra-wideband (UWB) Doherty reference design is now AWR Microwave Office design environment ready. The updated release features NXP’s BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers operating from 470 to 806 MHzand a 70 W DVB-T UWB LDMOS reference design using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum.


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