Qorvo Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.
M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high-performance analog RF, microwave, millimeter wave and photonic semiconductor products, will showcase a broad portfolio of new products for multi-market, aerospace, defense and networking applications at Booth # 321 at EDI CON 2015 in Beijing, China.
Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications.