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Articles Tagged with ''amplifiers''

Cree and Array Wireless provide HD broadcast equipment for NBC's Sunday Night Football

October 19, 2012

Cree Inc. and Array Wireless help bring the clarity of high-definition (HD) video transmission to Sunday Night Football (SNF) on NBC. The HD NFL games are broadcast using wireless video systems from Array Wireless that employ Cree’s advanced GaN RF components. Array Wireless counts on Cree world-class RF GaN technology to create high efficiency, low distortion, robust power amplifiers that are essential for high-definition video transmission.


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Milmega presented with Queen’s Award for Innovation 2012

October 22, 2012

Milmega Ltd. has been presented with the Queen’s Award for Enterprise in Innovation for developing amplifiers based on a novel design methodology, using gallium nitride-based transistor technology, which has brought the Company significant, global, commercial success.


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TriQuint's RF innovation experts available at EuMW

October 25, 2012

Heading to Amsterdam for EuMW 2012? Connect with TriQuint at booth #311 to see its expanded catalog of broad-market commercial & defense solutions including new: 


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AMCAD launches a new 1kV/ 30A pulse IV system for testing HVFS transistors

October 25, 2012

AMCAD Engineering announced the upgrade of its PIV semiconductor device analyzer family for the next generation of High Voltage Fast Switching (HVFS) Transistors.


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Teseq Holding AG acquires IFI, further expanding its RF amplifier capabilities

October 25, 2012

Teseq Holding AG, a leading developer and provider of instrumentation and systems for EMC emission and immunity testing, has acquired New York-based Instruments for Industry (IFI), a leading designer and manufacturer of solid state and traveling wave tube (TWT) amplifiers. The acquisition expands Teseq’s model range from an upper limit of 6 GHz up to an upper limit of 40 GHz and power levels from an upper limit of 1 kW to an upper limit of 10 kW.


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RFMD wins DARPA GaN contract to enhance high power RF PAs

MMICs&More
October 25, 2012

RF Micro Devices Inc. been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.


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Small cell new product selector guide now available from Richardson RFPD

October 31, 2012

Richardson RFPD Inc. announced the immediate availability of its Small Cell (Femto, Micro, Pico) New Product Selector Guide. The October 2012 Small Cell Selector Guide includes the latest semiconductors, passive devices, and frequency control devices for this dynamic application.


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Hittite releases new October 2012 Selection Guide

November 1, 2012

Hittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, is pleased to announce the release of the October 2012 Selection Guide which summarizes over 1050 products including 22 new products.


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NXP develops industry’s first full-band UHF Doherty architecture

November 2, 2012

Building on its leadership position in the digital broadcast market, NXP Semiconductors N.V. announced that it has developed the industry’s first ultra wideband solution for Doherty architectures. This patent-pending solution will uniquely enable manufacturers of digital transmitters to enjoy the high-efficiency gains that Doherty power amplifiers confer with greatly expanded bandwidth.


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Cree releases 50 V GaN HEMT technology to reduce cellular energy needs

November 5, 2012

Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.


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