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Articles Tagged with ''amplifiers''

RFMD to showcase high-performance RF components at IMS 2012

June 11, 2012

RF Micro Devices Inc. announced it will showcase its broad portfolio of products and technologies for the wireless and wired broadband markets at the upcoming IEEE International Microwave Symposium (IMS), held June 17-22, in booth 1210 at the Palais des congres Montreal, Canada.


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GaAs MMIC LNAs: CMD157 / CMD157P3

June 8, 2012

CMD157P3 ImageCustom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering two new devices from its growing MMIC design library. The CMD157 (die) and CMD157P3 (packaged) are GaAs MMIC low-noise amplifiers (LNAs) for applications from 6 to 18 GHz.


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GigOptix to showcase wideband amplifier and E-band solutions at IMS2012

June 6, 2012

GigOptix, Inc., a leading fabless supplier of semiconductor and optical components that enable high speed information streaming, announced that it will showcase its portfolio of wideband and E-band solutions at the International Microwave Symposium (IMS2012) in Montreal, Canada on June 17-22, 2012.


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Market for tower mounted amplifiers nears $500 M

June 4, 2012

Tower mounted amplifiers have now become a common addition to most macro base station systems. They increase overall system performance and are now easily mounted and monitored. Tower mounted amplifiers can provide significant BTS performance improvement for a moderate investment. Lance Wilson, research director, mobile networks, notes, “The use of tower mounted amplifiers in wireless infrastructure base station systems represents one of the most cost effective ways of improving overall system performance.”  


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REC/HXI exhibiting at IMS MTT-S 2012

May 30, 2012

Visit Renaissance Electronics Corporation/HXI at the IMS MTT-S 2012 tradeshow in Montreal, Canada, from June 19 - 21, Booth #500.


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Richardson RFPD introduces two InGaP HBT amplifiers from Freescale

MMICs and More
May 15, 2012

Richardson/FreescaleRichardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.


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TriQuint wins new $12.3M GaN DARPA contract contract

May 2, 2012

TriQuint Semiconductor Inc. announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.


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ESA adopts amplifiers developed by Chalmers for space probes

MarketWatch: International
April 30, 2012

Chalmers AntennaResearchers at Chalmers University of Technology, Sweden, have developed a new generation of amplifiers that has the ability to measure data that is currently buried by noise.


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MILMEGA wins Queen’s Award for Innovation 2012

April 23, 2012

MILMEGA Ltd has been awarded a Queen’s Award for Enterprise in Innovation for developing amplifiers, based on a novel design methodology, using gallium nitride-based transistors, for use in Electromagnetic Compatibility (EMC) test equipment.


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OpenET Alliance announces members and releases updated specs

April 16, 2012

The OpenET Alliance, the industry association that promotes energy efficient wireless transmission through Envelope Tracking (ET), has announced its first wave of members, and the release of an updated interface specification for cellular terminals.


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