Articles Tagged with ''power''

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Nujira Ltd., the world leader in envelope tracking (ET) technology, has announced that is sampling its next generation ET IC for mobile handsets, the NCT-L1200, to lead partners. The second product in its Coolteq.L ET product family, Nujira’s NCT-L1200 has already been delivered to several key platform chipset vendors, and is the only product currently available on the market that supports the maximum 20MHz channel bandwidth of LTE.

TriQuint Semiconductor Inc. has introduced three new devices for CATV infrastructure and fiber to the premises (FTTP) applications, including the industry’s first amplifier supporting return path DOCSIS® 3.0 channel bonding with 5 to 300 MHz bandwidth.

ERZIA Space´s line of products, especially focused on power amplifiers, will be presented during the 15th edition of the European Microwave Week. Visit the company at Stand 302.

Cree Inc. and Array Wireless help bring the clarity of high-definition (HD) video transmission to Sunday Night Football (SNF) on NBC. The HD NFL games are broadcast using wireless video systems from Array Wireless that employ Cree’s advanced GaN RF components. Array Wireless counts on Cree world-class RF GaN technology to create high efficiency, low distortion, robust power amplifiers that are essential for high-definition video transmission.

Florida RF Labs has added broadband resistive power dividers to the HybriX® line of signal distribution products. The new RPD series offers significant advantages over on-board multi-resistor design by providing excellent broadband frequency response, highly repeatable performance, and streamlined assembly process in a monolithic surface-mountable chip package.

RF Micro Devices Inc. been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.

Linear Technology Corp. introduces three low power 16-bit, 20Msps analog-to-digital converters (ADCs), the LTC2269, LTC2270 and LTC2271, offering the lowest input-referred noise and tight integral nonlinearity error (INL) for very high precision DC measurements. With only 46µV_RMS input noise and maximum guaranteed INL error of ±2.3LSB, these ADCs are suitable for very low noise, high linearity sampling applications such as digital x-ray, infrared and medical imaging, pachymeters, spectrometry and cytometry.

Analog Devices Inc. introduced a new family of microwave ICs, the ADF55xx series voltage controlled oscillators (VCOs), for point-to-point (PtP), instrumentation/ test equipment and satellite communication applications. Featuring the industry’s leading phase-noise performance, the new ADF55xx VCO series covers a frequency range from 3.5 GHz to 13.9 GHz, offers a wide frequency tuning range and can be optimized for power consumption, phase noise and power output.

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.

NuWaves Engineering of Middletown, Ohio, an international Radio Frequency (RF) and Embedded Systems solutions provider, will be exhibiting its high-performance, miniaturized RF products and also demonstrating its most recent technological advancement, a Power Amplifier Linearizer Module (“PALM”) at MILCOM 2012.