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Articles Tagged with ''power''
Microsemi introduces world's first SiGe-based, monolithic RF FE device designed for 5G WiFi platforms
Microsemi Corp., a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, delivered the world's first monolithic silicon germanium (SiGe) RF front-end (FE) device for the 5th generation of Wi-Fi devices based on IEEE 802.11ac standard. Benefitting from its industry-leading integration levels and utilizing high-performance SiGe process technology, the new LX5586 RF FE provides significant performance and cost advantages over existing technologies.
Building on its leadership position in the digital broadcast market, NXP Semiconductors N.V. announced that it has developed the industry’s first ultra wideband solution for Doherty architectures. This patent-pending solution will uniquely enable manufacturers of digital transmitters to enjoy the high-efficiency gains that Doherty power amplifiers confer with greatly expanded bandwidth.
Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.
NuWaves Engineering of Middletown, Ohio, an international Radio Frequency (RF) and Embedded Systems solutions provider, will be exhibiting its high-performance, miniaturized RF products and also demonstrating its most recent technological advancement, a Power Amplifier Linearizer Module (“PALM”) at MILCOM 2012.
TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.
Analog Devices Inc. introduced a new family of microwave ICs, the ADF55xx series voltage controlled oscillators (VCOs), for point-to-point (PtP), instrumentation/ test equipment and satellite communication applications. Featuring the industry’s leading phase-noise performance, the new ADF55xx VCO series covers a frequency range from 3.5 GHz to 13.9 GHz, offers a wide frequency tuning range and can be optimized for power consumption, phase noise and power output.
Linear Technology Corp. introduces three low power 16-bit, 20Msps analog-to-digital converters (ADCs), the LTC2269, LTC2270 and LTC2271, offering the lowest input-referred noise and tight integral nonlinearity error (INL) for very high precision DC measurements. With only 46µVRMS input noise and maximum guaranteed INL error of ±2.3LSB, these ADCs are suitable for very low noise, high linearity sampling applications such as digital x-ray, infrared and medical imaging, pachymeters, spectrometry and cytometry.
Florida RF Labs has added broadband resistive power dividers to the HybriX® line of signal distribution products. The new RPD series offers significant advantages over on-board multi-resistor design by providing excellent broadband frequency response, highly repeatable performance, and streamlined assembly process in a monolithic surface-mountable chip package.
Cree Inc. and Array Wireless help bring the clarity of high-definition (HD) video transmission to Sunday Night Football (SNF) on NBC. The HD NFL games are broadcast using wireless video systems from Array Wireless that employ Cree’s advanced GaN RF components. Array Wireless counts on Cree world-class RF GaN technology to create high efficiency, low distortion, robust power amplifiers that are essential for high-definition video transmission.
ERZIA Space´s line of products, especially focused on power amplifiers, will be presented during the 15th edition of the European Microwave Week. Visit the company at Stand 302.