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Articles Tagged with ''power''

IXYS Colorado introduces the IXRFD630 and IXRFD631 high power RF drivers

IXYS Corp., a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced the introduction of the IXRFD630 and IXRFD631 High Power RF MOSFET Drivers by its IXYS Colorado division. These drivers succeed the DEIC420 and DEIC421 and represent the next generation of RF driver for many RF applications including 13.56 and 27.12 Mhz RF power.


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UMS increases the frequency range of its CHA3801-QDG LNA

United Monolithic Semiconductors (UMS) announced the frequency band of the CHA3801-QDG LNA has been increased from 1.25 to 1.75GHz to 1 to 2GHz. 


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TI's 12-bit, 500- to 900-MSPS ADCs slash board space by 80%

RFIC

Texas Instruments Inc. (TI) introduced a family of 12-bit, 500- to 900-MSPS analog-to-digital converters (ADCs) that reduce board space by 80 percent while providing industry-leading signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).


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RFMD introduces 500 W GaN L-Band amplifier

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.


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Freescale's RF business makes long-term commitment to U.S.-based aerospace and defense market

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.


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Richardson RFPD announces ADI RF power detector kit promotion at IMS 2013

Richardson RFPD Inc. announces an exclusive IMS 2013 promotion featuring an RF Power Detector Kit from Analog Devices Inc. (ADI).


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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.


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Clean up your test bench with a little help from Vaunix’s Lab Bricks at IMS 2013

Vaunix Technology Corp., (www.vaunix.com), a manufacturer of USB controlled and powered test equipment, is pleased to announce they’ll be displaying their latest models of USB powered Lab Bricks at the International Microwave Symposium (IMS) in Seattle, WA June 4-6th in booth #2042.  


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Empower's live demo of 20 to 1000 MHz, 1 kW PA highlights unrivaled size and power advantages

Continuing to build momentum and recognition for their “Size Matters” HPA platforms, Empower RF Systems is hosting live demonstrations of their 1 kW, 20 to 1000 MHz, 5U chassis design (model 2162) at IMS 2013, Booth 1827. 


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TriQuint's new power doublers offer high output CATV infrastructure performance

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, released its new gallium nitride (GaN) integrated power doubler with superior performance for fast-growing CATV infrastructure.


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