RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM Technology Solutions (MACOM).
Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), announced the PE42820 and PE42821 single-pole double throw (SPDT) switches for high-power wireless applications. The new switches provide an unprecedented combination of high-power handling and excellent linearity while offering an integrated approach that reduces board area, power consumption and design-in complexity compared to traditional discrete solutions.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new high power amplifier that is ideally suited for C-Band radar and communication applications.
CRFS, a leader in RF spectrum monitoring systems, has announced the launch at DSEI 2013 of its RFeye® Nexus range of wideband receiver modules, featuring class-leading signal interception capability and flexible PCIe interfacing for easy integration into other systems.
Hittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, has launched a new power amplifier which maintains excellent performance over its operating frequency range. The new amplifier, HMC6981LS6, is ideal for high linearity point-to-point and point-to-multi-point radios, SATCOM, military and space applications.
At DSEI 2013, e2v, the innovative solutions provider, will be introducing a new range of ultra wideband (2-18GHz) Microwave Power Modules (MPMs). Suitable for use in Electronic Warfare (EW), data links and radar and communications systems, the MPMs feature market-leading size, weight and power (SWaP) characteristics and are not covered by International Traffic in Arms Regulations (ITAR).
Emerson Network Power, a business of Emerson and global leader in RF, microwave, and optical connectivity solutions for the delivery of voice, video, and data, announces the Occupational Health and Safety Assessment Series (OHSAS) 18001:2007 certification at their Chelmsford, U.K. facility.
Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz.