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Articles Tagged with ''power''

Freescale introduces first GaN RF power transistor for cellular base stations

Freescale Semiconductor introduced its first gallium nitride (GaN) RF power transistor for cellular base stations. The new A2G22S160-01S delivers exceptional performance in 30 W and 40 W amplifiers for wireless infrastructure applications, and represents the first of what is planned to become a broad portfolio of Airfast family GaN transistors for the cellular market. 


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MACOM expands GaN portfolio with new wideband power amplifier at IMS 2015

 M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the newNPA1006, a Gallium Nitride (GaN) wideband power amplifier optimized for 20-1000 MHz operation. This GaN on Silicon (Si) HEMT D-Mode Amplifier is suited for narrowband to broadband applications spanning test and measurement, defense communications, land mobile radio and wireless infrastructure. 


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Qorvo introduces high power plastic packaged GaN MMICs

 Qorvo, Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced the introduction of high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers in plastic packages designed to improve the size, weight and power performance in commercial and military S-band radar applications. 


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Marki Microwave introduces MMIC mixers and amplifiers

 Marki Microwave is proud to announce the release of MMIC mixers and amplifiers at the International Microwave Symposium in Phoenix. After several years of intensive development, the new GaAs Schottky MMIC mixers serve as an outstanding low cost and high performance complement to Marki's existing band ofdouble balanced Microlithic® mixers. Between these two products lines, Marki has every RF and LO frequency from 1.5 to 67 GHz covered with some type of chip scale form factor design. 


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TRAK Microwave's GaN SSPA powers Ku band block upconverter

 The model MFC147 from TRAK Microwave provides 13.75 to 14.50 GHz coverage for civilian and military aviation Ku-band SATCOM applications, including In-Flight Entertainment (IFE) systems and UAV communications. The unit features a ruggedized design and innovative thermal management technique to withstand challenging airborne environments utilizing SMT construction with no open die. Input frequency to the Block Upconverter (BUC) is 950-1700 MHz, with Ku-band output of +12 to +17 dBm.  An integrated, low-noise, GaN, Solid State Power Amplifier (SSPA) provides 25 watts minimum output power providing better than -120 dBc/Hz noise power (-140 dBc/Hz typical) and <-22 dBc spectral regrowth (OQPSK). 


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TRAK Microwave's GaN SSPA powers ku band block upconverter

 The model MFC147 from TRAK Microwave provides 13.75 to 14.50 GHz coverage for civilian and military aviation Ku-band SATCOM applications, including In-Flight Entertainment (IFE) systems and UAV communications. The unit features a ruggedized design and innovative thermal management technique to withstand challenging airborne environments utilizing SMT construction with no open die. Input frequency to the Block Upconverter (BUC) is 950-1700 MHz, with Ku-band output of +12 to +17 dBm.  An integrated, low-noise, GaN, Solid State Power Amplifier (SSPA) provides 25 watts minimum output power providing better than -120 dBc/Hz noise power (-140 dBc/Hz typical) and <-22 dBc spectral regrowth (OQPSK). 


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NI Microwave Component's QuickSyn lite frequency synthesizers now extended to millimeter wave

 NI Microwave Component's popular QuickSyn Lite frequency synthesizers are now extended to millimeter wave. The new synthesizer modules employ the same revolutionary phase-refining technology that all QuickSyn products use to enable fast switching speed, low phase noise, compact size, and low cost. The modules are available in three popular bands—27 to 40 GHz, 50 to 67 GHz, and 76 to 82 GHz—and are designed to supply medium power output. These new products present a very cost-effective solution for applications requiring a stable and clean CW millimeter-wave source. 


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MACOM designs Ka-Band MMIC power amplifier with NI AWR Design Environment

MACOM designers used NI AWR Design Environment™ software inclusive of Microwave Office circuit design software, AXIEM 3D planar EM simulator, Analyst™ 3D FEM simulator, and APLAC harmonic balance (HB) simulator to successfully design and simulate a 4 W Ka-band PA using a 2 mil thick 0.15 um GaAs pseudomorphic high-electron mobility transistor (pHEMT) process.


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