Linear Technology Corp. introduces the LTM2884, a USB µModule® (micromodule) Isolator that combines USB data communications and USB power, and guards against ground-to-ground differentials and large common mode transients.
The Internet of Things is an emerging theme in the technical sessionsat the IEEE MTT-S 2014 International Microwave Symposium (IMS), reflecting the critical part the microwave and RF industry plays in developing technologies that enable sophisticated peer-to-peer, machine-to-machine and people-to-machine scenarios.
Rogers Corp. and representatives of the company’s Advanced Circuit Materials division (ACM) will be present at the 2014 IEEE International Microwave Symposium (IMS) June 3-5 to help attendees learn more about Rogers' wide range of high frequency circuit materials.
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.
Element Six, a leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Co. to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, will showcase the industry's broadest GaN product portfolio at IMS 2014 in Tampa, Florida, at booth 915.