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Articles Tagged with ''power''

Skyworks introduced suite of breakthrough ultra low noise amplifiers at MTT-S 2014

Skyworks Solutions Inc., an innovator of high performance analog semiconductors enabling a broad range of end markets, unveiled a suite of new, ultra-low noise amplifiers (LNAs) for cellular infrastructure, wireless connectivity and broadcast communication applications.  The new LNAs provide best-in-class noise figure as well as high gain and linearity, improving receiver sensitivity and dynamic range.


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Soitec and Simgui announce major partnership to produce 200-mm SOI wafers in China

Soitec, a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Shanghai Simgui Technology Co. Ltd., a Chinese silicon-based semiconductor materials company, have formed an international partnership to address both China's growing demand and limited worldwide production capacity for 200-mm silicon-on-insulator (SOI) wafers used in fabricating semiconductors for radio-frequency (RF) and power applications.


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NXP announces latest RF innovations at IMS 2014

NXP Semiconductors N.V. announced at IMS 2014 a series of innovative new solutions that consolidates the company’s leadership position in RF, with particular emphasis on enhancing the capabilities of wireless/cellular networks and digital broadcasting infrastructure. As the demand for high quality mobile data services explodes and new markets open up for digital TV and radio programming, NXP brings 50 years of expertise in RF to meet the power, quality, efficiency and cost challenges that network and service providers are facing today.


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API Technologies introduces 1,000 W pulsed power amplifiers

API Technologies Corp., a leading provider of high performance RF/microwave, power, and security solutions for critical and high-reliability applications, expands its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These new pulsed, solid state power amplifiers are making their debut at the IEEE MTT-S International Microwave Symposium (IMS 2014) in Tampa, Florida.


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Comtech PST introduces a new high power density solid state RF module

Comtech PST proudly introduces a new high power density solid state RF module. Comtech’s latest development continues to expand on its proven innovative integrated RF GaN power amplifier designs by further increasing the RF power density. Consistent with its planned technology development roadmap, Comtech proudly introduces the latest in GaN-based 6-18 GHz RF amplifier. This highly integrated design is ideal for use in communication, electronic warfare, and radar transmitter systems where space, cooling, and power are limited.


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