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Articles Tagged with ''power''

Internet of Things a key focus at IMS2014

The Internet of Things is an emerging theme in the technical sessionsat the IEEE MTT-S 2014 International Microwave Symposium (IMS), reflecting the critical part the microwave and RF industry plays in developing technologies that enable sophisticated peer-to-peer, machine-to-machine and people-to-machine scenarios.


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Cree introduces highest power and frequency plastic packaged GaN transistors

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.


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Element Six's GaN-on-diamond wafers proven by Raytheon to provide three times improvement in power density

Element Six, a leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Co. to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.


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