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Articles Tagged with ''rfmw''

RFMW introduces DVGA solutions from TriQuint Semiconductors

April 6, 2012

RFMW Ltd. announces design and sales support for the TQM879008 digital variable gain amplifier (DVGA) adding to a series of high performance, pin compatible DVGAs spanning the frequency range of 600 to 2700 MHz.


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Peregrine Semiconductor and RFMW announce global distribution agreement

September 25, 2012

Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs),and RFMW Ltd. announced they have finalized a worldwide distribution agreement for Peregrine’s UltraCMOS® RFICs. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components, as well as specialized component-engineering support.


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RFMW and EMC Technology/Florida RF Labs announce EMEA distribution agreement

October 3, 2012

RFMW Ltd. and EMC Technology/Florida RF Labs, a Smiths Interconnect business, announced a distribution agreement effective June 13, 2012 adding Europe, the Middle East and Africa (EMEA) to franchised RFMW territories. EMC Technology/Florida RF Labs is an internationally recognized leader in the development and manufacture of high quality thin film microwave resistive products, high reliability RF and microwave coaxial cable assemblies and high performance couplers for military, space and commercial applications.


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RFMW introduces 2 x 2 mm LNA from TriQuint Semiconductor

October 10, 2012

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s TQP3M9037, internally matched, low noise amplifier combining a 0.4 dB noise figure with 20 dB gain and 35 dBm OIP3 in a 2 x 2 mm DFN package. This newest addition to TriQuint’s LNA product line provides an instantaneous bandwidth of 1500 to 2700 MHz and requires only bypass/blocking capacitors and a bias inductor for operation, no matching components are required to achieve this high level of performance.


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RFMW introduces 35W GaN transistor from TriQuint Semiconductor

November 7, 2012

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC to 3.5 GHz GaN transistor offering up to 37W P3dB.  Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors.


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RFMW announces new worldwide headquarters

December 6, 2012

RFMW Ltd. announces the relocation of its worldwide headquarters in San Jose, CA. RFMW Ltd. is a specialty electronics distribution company focused on RF and Microwave technology with locations throughout North America, Europe and the Middle East.


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High-Rejection Bandpass Filter

January 7, 2013

JTI_2450BP15Q0100[1]RFMW Ltd. announces design and sales support for Johanson Technology’s (JTI) newly introduced 2.4 GHz, high-rejection bandpass filter (BPF) with land grid array (LGA)-type terminations. This brand new BPF has the highest close-to-passband rejection with the smallest footprint ever made by JTI.


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RFMW introduces BAW filters from TriQuint Semiconductor

January 17, 2013

RFMW Ltd. announces design and sales support for TriQuint Semiconductor BAW filters including the 885025, a Band 2 uplink filter at 1880MHz. BAW filters offer improved power handling performance over traditional SAW filters. The TriQuint 885025 has a usable bandwidth of 60MHz and the RoHS compliant 3x3mm ceramic package can handle up to 1W (30dBm) of CW RF energy.


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RFMW supports digital pre-distortion anti aliasing filters from Sangshin Elecom

February 28, 2013

RFMW Ltd. announces design and sales support for Sangshin Elecom ceramic monoblock filters targeting digital pre-distortion (DPD) applications where anti-aliasing filters are required to improve system performance. Sangshin offers a complete line of filters with bandwidths of 400 MHz, 360 MHz, and 300 MHz in all popular cellular frequencies.


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RFMW introduces 250-Micron discrete FET from TriQuint

April 12, 2013

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.


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