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Articles Tagged with ''array''

Raytheon continues to drive GaN evolution through cutting edge innovation

Aerospace & Defense

Raytheon Co. announced today that under the DARPA Microsystems Technology Office (MTO) Wide Bandgap Semiconductor Program, the company has systematically matured Gallium Nitride (GaN) from basic material to transistors, Monolithic Microwave Integrated Circuits (MMICs), Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs), enabling game changing system performance for the DoD.  


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Compact 3/4W Chip Attenuator for Ku, K & Ka Bands

AV0904GA attenuatorBarry Industries, an ISO9001:2008 certified, ITAR registered manufacturer of high quality thick film resistors, terminations, attenuators and high temperature co-fired ceramic (HTCC) packaging, introduces a new 0904 size chip attenuator for Ku, K and Ka Bands. The AV0904GA attenuator has been characterized to 30 GHz, features gold wirebondable I/O terminals with epoxy mount ground pads and is rated to 750 mW. Typical VSWR is 1.20:1 from DC to 18 GHz and 1.50:1 to 30 GHz.


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Vishay Intertechnology enhances ACAS 0612 Precision series of thin film chip resistor arrays

Vishay Intertechnology Inc. announced that it has enhanced its ACAS 0612 precision thin film chip resistor arrays with tighter absolute TCR down to ± 10 ppm/K, relative TCR down to ± 5 ppm/K, and relative tolerance down to ± 0.05 % for automotive, industrial, and telecommunications applications. 


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Cree RF technology helps capture Hollywood aerial action sequence

Cree’s GaN RF technology played a critical behind-the-scenes role in the upcoming action film, “Escape Plan,” starring Sylvester Stallone and Arnold Schwarzenegger. The film features aerial stunt sequences captured using a low-latency HD camera and transmitter and Array Wireless’ S-Band linear power amplifier, which employs Cree’s world-class GaN HEMT semiconductors to meet the stringent linearity requirements for wide bandwidth HD digital transmission. 


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