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Articles Tagged with ''amplifier''

Richardson RFPD introduces 30 W GaN power amplifier from TriQuint

September 20, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities of a new 30 W GaN power amplifier from TriQuint Semiconductor Inc. (TriQuint).


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Comtech Xicom expands product line to address extended Ku-Band frequencies

September 25, 2012

Comtech Xicom Technology Inc., a technology leader of high power amplifier products for satellite communication (SATCOM), announced an expanded 12.75 to 14.5 GHz frequency coverage option for its Ku-Band, traveling wave tube amplifiers (TWTAs).


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Comtech Xicom Technology announces new 40 W, high-efficiency, Ku-Band BUC

September 27, 2012

Comtech Xicom Technology Inc., a technology leader in high power amplifier products for satellite communications (SATCOM), introduced a new compact, lightweight and highly efficient solid-state Ku-Band block up converter (BUC) designed for transportable satellite communications uplinks.


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Skyworks unveils two stage, high linearity and high gain low noise amplifier

September 27, 2012

Skyworks introduces a 2.3 to 2.8 gigahertz, two stage, high linearity and high gain (32 dB) low noise amplifier that offers very low noise figure (0.85 db) and excellent return loss (15 db) in a small 4 mm square quad flat, no lead package.


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Agilent unveils ADS 2012

EDAFocus
October 3, 2012

Agilent Technologies Inc.  unveiled ADS 2012, the next major release of its Advanced Design System (ADS) flagship RF and microwave EDA platform.


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Aethercomm introduces a high power GaN SSPA

October 9, 2012

Aethercomm Inc., has recently completed a high power SSPA using a Gallium Nitride (GaN) with a frequency range covering 2.9 to 3.1 GHz: Aethercomm part number SSPA 2.9-3.1-300. The devices in this amplifier design are not matched, therefore the frequency band is scalable from 2.7 to 2.9 GHz or 2.7 to 3.5 GHz with similar performance. This high power SSPA produces 300 to 400 watts peak output power.


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RFMW introduces 2 x 2 mm LNA from TriQuint Semiconductor

October 10, 2012

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s TQP3M9037, internally matched, low noise amplifier combining a 0.4 dB noise figure with 20 dB gain and 35 dBm OIP3 in a 2 x 2 mm DFN package. This newest addition to TriQuint’s LNA product line provides an instantaneous bandwidth of 1500 to 2700 MHz and requires only bypass/blocking capacitors and a bias inductor for operation, no matching components are required to achieve this high level of performance.


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TriQuint releases 1st return path DOCSIS amplifier for channel bonding in HFC networks

MMICs&More
October 12, 2012

TriQuint Semiconductor Inc. has introduced three new devices for CATV infrastructure and fiber to the premises (FTTP) applications, including the industry’s first amplifier supporting return path DOCSIS® 3.0 channel bonding with 5 to 300 MHz bandwidth.


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Richardson RFPD introduces high linearity PA and two new dual-stage LNAs from Freescale

MMICs&More
October 15, 2012

Richardson RFPD Inc. announces immediate availability and full design support capabilities for three new devices from Freescale Semiconductor Inc. (Freescale).


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Amplifier Technology designs “Right the First Time” amplifiers using AWR’s Microwave Office

October 18, 2012

What: Amplifier Technology Ltd., (ATL) a provider of leading-edge RF power amplifiers (PAs) for defense, commercial, industrial, scientific, and medical applications, used a unique combination of AWR’s Microwave Office RF/microwave design suite and AMPSA’s MultiMatch Amplifier Design Wizard to design a complex multi-octave bandwidth, high power, high efficiency PA.


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