NXP Semiconductors N.V. introduced the industry’s largest portfolio of broadband 28 V LDMOS two-stage, dual-path Doherty-optimized Integrated Circuits (ICs) for small cell base stations. As part of NXP’s leading RF power transistor portfolio, the new LDMOS ICs are designed to provide RF power, efficiency, and gain in all current and proposed frequency bands, from 700 to 3800 MHz, with RF output power of 2.5 to 12 W.
During the International Microwave Symposium (IMS) 2016, May 22-27, 2016, Dr. Klaus Werner, executive director of the RF Energy Alliance (RFEA), will showcase the current state of the Alliance and the impact the organization has made in its first two years.
See AR at IMS2016 in San Francisco, Calif., Booth #1711. While at AR's booth, ask about their industry-leading high power solid state CW amplifiers. Products include a Class A RF amplifier capable of delivering over 50,000 W with -40 dBc minimum harmonic performance, a 10,000 W linear amplifier covering the entire 80 to 1000 MHz frequency band and a 3000 W, 1 to 2.5 GHz amplifier.
Vaunix Technology Corp., a manufacturer of USB controlled and powered test equipment, will be debuting two new test application solutions at the 2016 International Microwave Symposium (IMS) in San Francisco, Calif., the LDA-203 and the LMS-802DX.
Ampleon announced details of its participation at the forthcoming IEEE MTT International Microwave Symposium (IMS) held in San Francisco 22 – 27 May, 2016. On display at booth 2149 will be the latest innovations in power amplifier solutions for mobile broadband applications, Doherty amplifiers for use in broadcast and new product concepts such as pallets for S-Band radar applications. Also showcased will be products housed in thermally optimized packages addressing industrial and medical applications
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces two UltraCMOS® MPAC–Doherty products—the PE46130 and PE46140. These monolithic phase and amplitude controllers (MPAC) join the PE46120 in offering maximum phase-tuning flexibility for Doherty power amplifier (PA) optimization.
Cobham and RFHIC will jointly develop GaN High Power Amplifier (HPA) modules that will be integrated into a prototype 175 kW solid-state transmitter. Development activities under this Memorandum of Agreement will be executed by Cobham Integrated Electronics Solutions, a business unit of CAES at its Exeter, N.H. site.