Exodus Advanced Communications is a designer and manufacturer of RF solid state high power amplifiers. We feature the latest in LDMOS, GaN and GaAsFET discrete devices and hybrid Chip & Wire on ceramic substrate technologies featuring frequency ranges from 10 KHz to 40 GHz and power levels exceeding 1 KW for modules and 10 KW for systems.
Analog Devices, Inc. introduced the HMC1127 and the HMC1126 MMIC (Monolithic Microwave Integrated Circuit) distributed power amplifiers. Covering the frequency range of 2 to 50 GHz, these new power amplifier die simplify system design and improve performance by eliminating the need for RF switches between frequency bands.
Comtech PST proudly introduces another new Gallium Nitride (GaN) amplifier for X-Band applications. This class AB linear design operates over the full 9 to 10 GHz frequency range and is ideal for use in Phase Array Radar applications, as a TWT replacement or for a microwave communication link.
MACOM designers used NI AWR Design Environment™ software inclusive of Microwave Office circuit design software, AXIEM 3D planar EM simulator, Analyst™ 3D FEM simulator, and APLAC harmonic balance (HB) simulator to successfully design and simulate a 4 W Ka-band PA using a 2 mil thick 0.15 um GaAs pseudomorphic high-electron mobility transistor (pHEMT) process.