Analog Devices, Inc. introduced the HMC1127 and the HMC1126 MMIC (Monolithic Microwave Integrated Circuit) distributed power amplifiers. Covering the frequency range of 2 to 50 GHz, these new power amplifier die simplify system design and improve performance by eliminating the need for RF switches between frequency bands.
Comtech PST proudly introduces another new Gallium Nitride (GaN) amplifier for X-Band applications. This class AB linear design operates over the full 9 to 10 GHz frequency range and is ideal for use in Phase Array Radar applications, as a TWT replacement or for a microwave communication link.
MACOM designers used NI AWR Design Environment™ software inclusive of Microwave Office circuit design software, AXIEM 3D planar EM simulator, Analyst™ 3D FEM simulator, and APLAC harmonic balance (HB) simulator to successfully design and simulate a 4 W Ka-band PA using a 2 mil thick 0.15 um GaAs pseudomorphic high-electron mobility transistor (pHEMT) process.
Cree, Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has released the highest power Ku-Band MMIC available on the market.