Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, announced the completion of a 1 kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards.
Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), has the added CMD238 2 to 20 GHz amplifier to its market leading BroadRange Distributed Amplifier™ portfolio.
MACOM Technology Solutions Inc. ("MACOM") announced the new MAAP-011161 and the MAAP-011193, two packaged linear power amplifiers designed specifically for use in point-to-point radios in cellular backhaul applications.
NXP Semiconductors N.V. introduced the industry’s largest portfolio of broadband 28 V LDMOS two-stage, dual-path Doherty-optimized Integrated Circuits (ICs) for small cell base stations. As part of NXP’s leading RF power transistor portfolio, the new LDMOS ICs are designed to provide RF power, efficiency, and gain in all current and proposed frequency bands, from 700 to 3800 MHz, with RF output power of 2.5 to 12 W.
During the International Microwave Symposium (IMS) 2016, May 22-27, 2016, Dr. Klaus Werner, executive director of the RF Energy Alliance (RFEA), will showcase the current state of the Alliance and the impact the organization has made in its first two years.
See AR at IMS2016 in San Francisco, Calif., Booth #1711. While at AR's booth, ask about their industry-leading high power solid state CW amplifiers. Products include a Class A RF amplifier capable of delivering over 50,000 W with -40 dBc minimum harmonic performance, a 10,000 W linear amplifier covering the entire 80 to 1000 MHz frequency band and a 3000 W, 1 to 2.5 GHz amplifier.
Vaunix Technology Corp., a manufacturer of USB controlled and powered test equipment, will be debuting two new test application solutions at the 2016 International Microwave Symposium (IMS) in San Francisco, Calif., the LDA-203 and the LMS-802DX.