Ted Rappaport, founding director of NYU WIRELESS and a leading proponent of using the millimeter wave spectrum for wireless communications, discusses the FCC's recent rulemaking actions and technology developments that are paving the way to 5G.
Ampleon announced a new family of integrated Doherty power amplifier devices aimed at LTE Advanced Pro / 4.5G massive-MIMO base station applications and capable of being used as power amplifiers in small cells.
NI AWR Design Environment will be featured in the third annual NI-sponsored RF/Microwave Power Amplifier Forum being held during European Microwave Week (EuMW 2016), October 4-6 in London. Entitled Device Technologies, Characterization, Modeling and End-Use Applications, the forum takes place on Wednesday, October 5 from 9:30 a.m. to 2:00 p.m. in Room 6, Conference Area Level 3.
MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeter wave and photonic semiconductor products and components, today introduced two wideband amplifiers, the MAAM-011229, a Low Noise Amplifier, and the MAAM-011206, a Darlington amplifier, to its growing portfolio of high-performance MMICs.
Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), has added two new packaged driver amplifiers to their expanding product offerings, the CMD232C3 and the CMD231C3.
Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, announced the completion of a 1 kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards.
Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), has the added CMD238 2 to 20 GHz amplifier to its market leading BroadRange Distributed Amplifier™ portfolio.
MACOM Technology Solutions Inc. ("MACOM") announced the new MAAP-011161 and the MAAP-011193, two packaged linear power amplifiers designed specifically for use in point-to-point radios in cellular backhaul applications.
NXP Semiconductors N.V. introduced the industry’s largest portfolio of broadband 28 V LDMOS two-stage, dual-path Doherty-optimized Integrated Circuits (ICs) for small cell base stations. As part of NXP’s leading RF power transistor portfolio, the new LDMOS ICs are designed to provide RF power, efficiency, and gain in all current and proposed frequency bands, from 700 to 3800 MHz, with RF output power of 2.5 to 12 W.
During the International Microwave Symposium (IMS) 2016, May 22-27, 2016, Dr. Klaus Werner, executive director of the RF Energy Alliance (RFEA), will showcase the current state of the Alliance and the impact the organization has made in its first two years.