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May 2013 Digital Edition Online Edition

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From a Russian Source

Oscillator and synthesizer developments in Russia

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The Premier of EDI CON

A look at an emerging community and its unique technology needs in a recap of EDI CON 2013

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Efficiency Enhanced Amplifier Using a Digitally-Controlled Dynamic Bias Switching Circuit

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California receives first-ever white space broadband network

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MTT-S IMS 2013 Online Show Daily

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Isola Thermal Analysis Capabilities

Better than photos - Northrop Grumman, U.S. Navy conduct arrested landing of X-47B unmanned demonstrator

- Northrop Grumman, U.S. Navy conduct arrested landing of X-47B unmanned demonstrator

TPR1000 - SiC High Power Transistors for Next Generation VHF/UHF Radar

- Wireless Trends to Look for at MWC 2013

LTE and WSN - Wireless Sensor Networks: Overcoming the Challenges to Reach $2 B in 2021

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RFMD unveils 380 W GaN wideband pulsed power amplifier

January 11, 2012
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RFMD’s new RF3928B is a 65 V 380 W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general-purpose broadband amplifier applications.


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RFMD releases 2.4 GHz band single-chip Zigbee front-end module

January 18, 2012
RFMD
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RF Micro Devices Inc. (RFMD), a designer and manufacturer of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFFM6201, a 2.4 GHz band single-chip Zigbee® front-end module (FEM) featuring an integrated power amplifier, low noise amplifier and diversity switch.
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M/A-COM Technology rolls out seven new products

January 18, 2012
M/A-COM
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M/A-COM Technology Solutions Inc. (M/A-COM Tech), a supplier of high-performance analog semiconductor solutions, introduced seven new products covering networks and aerospace and defense applications.
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Avago introduces PA for LTE cellular infrastructure equipment

MMICs & More
January 18, 2012
Avago Technologies
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Avago_MGA-43128Avago Technologies, a supplier of analog interface components for communications, industrial and consumer applications, announced a high-gain, high-linearity power amplifier for high-data-rate applications found in 700 to 800 MHz cellular infrastructure equipment.


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Samsung selects Javelin's CMOS 3G power amplifier

MMICs & More
January 31, 2012
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Javelin_CMOS_PAJavelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd. has selected Javelin’s JAV5501 Band I PA for new Galaxy smartphones.


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M/A-COM announces new power amplifier for point-to-point applications

February 2, 2012
M/A-COM Technology Solutions
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M/A-COM Technology Solutions Inc., a supplier of high-performance analog semiconductor solutions, introduced a new power amplifier for point-to-point radio applications.
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RFMD launches transmit/receive front end module

February 2, 2012
RFMD
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RFMD’s new RF6504 is a front end module for 433 to 470 MHz AMI/AMR systems.
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RFHIC introduces GaN-SiC narrowband high power amplifier

February 2, 2012
RFHIC
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RFHIC's RNP21040-50 is a unique GaN-SiC narrowband high power amplifier that provides high power output and high efficiency.
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Skyworks ramps GPS/GNSS solutions for Samsung

February 3, 2012
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Skyworks Solutions Inc., an innovator of high reliability analog and mixed signal semiconductors enabling a broad range of end markets, announced that it is ramping global positioning system (GPS) and global navigation satellite system (GNSS) solutions for Samsung Electronics Co. Ltd., one of the world’s leading smart phone providers.
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RFMD debuts 1 W linear high power amplifier

MMICs and More
February 14, 2012
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WiFiRFMD’s new RF5652 high-power amplifier (PA) addresses IEEE 802.11b/g/n WiFi (2.4 to 2.5 GHz) for customer premises equipment (CPE) applications.


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