Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), is adding a new 5 to 11 GHz ultra-low noise amplifier to its growing line of high-quality products. The CMD132P3 presents an ultra-low noise figure of 1.3 dB, delivers greater than 20 dB of gain across the entire bandwidth, and has a corresponding output 1 dB compression point of +10 dBm.
Linear Technology announces the LTC6430-15, a 15dB amplifier, which achieves high dynamic range in a 100 Ohm differential environment from 20 MHz to 1GHz and beyond. Two performance grades are available: at 240MHz, the A-grade OIP3 is typically 50 dBm and is fully tested and guaranteed to be a minimum of 47dBm. Noise Figure is 3dB, which corresponds to an input-referred amplifier noise of 1nV/√Hz.
Richardson RFPD Inc. announces its sponsorship of a special expert forum discussing the state-of-the-art in Gallium Nitride semiconductor technology targeting high-power RF and microwave applications. This forum will be held at EDI CON 2013 in the Beijing International Convention Center, Beijing, China, March 12-14, 2013. As the sponsor, Richardson RFPD has assembled a panel of experts from leading suppliers of discrete transistors and integrated circuits based on GaN technology.
L-3 Electron Devices announced that it is introducing its smallest microwave power module to date. The new NanoMPM® amplifier represents a breakthrough form factor in microwave amplifiers, achieving greater than 40 watts of saturated Ku-Band output power while weighing in at less than 1.5 pounds.
Centellax Inc. is pleased to announce the release of its 2 to 50 GHz RF power amplifiers for military communication and instrumentation systems. The amplifier is available with either 30 dB gain or 18 dB gain. Both are instrument grade amplifiers providing exceptional gain flatness per octave over greater than 5 octaves of frequency coverage.
RF Micro Devices Inc. unveiled a highly-integrated front end module (FEM) for Smart Energy/Advanced Metering Infrastructure (AMI) applications at the 2013 Consumer Electronics Show (CES) in Las Vegas. RFMD’s single-chip RFFM6403 FEM delivers industry-leading performance, reduces customer design time and speeds customer time-to-market in Smart Energy/AMI applications operating in the 405 to 475 MHz frequency range, as well as for portable battery powered equipment and general 433/470 MHz ISM band systems.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, introduced the highly-integrated RFFM4501E front end module (FEM) for 802.11ac notebook and mobile equipment applications. RFMD's newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150GHz — 5.850GHz frequency band and is optimized to support multiple applications, including notebooks, mobile routers, and low-power customer premises systems.
TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released two new dual matched low noise amplifiers that are ideally suited for balanced high performance RF design configurations. These integrated LNAs are highly linear and offer very low noise figures, high output and include automatic shut-down capability for use in Time Division Duplex (TDD) and Frequency-Domain Duplex (FDD) applications.
Skyworks introduces a highly efficient, broadband, 13 dB gain, GaAs HBT drive amplifier in a small 2 x 2 millimeter quad flat, no lead package. The SKY67130-396LF draws less than 23 mA at 3.3 V, while achieving +39 dBm OIP3, providing the market with a very compelling, high linearity solution. On-die active bias design ensures consistent performance and unconditional stability.
Analog Devices Inc. (ADI), a world leader in high-performance semiconductors for signal processing applications and RF ICs, introduced a dual-channel differential amplifier for driving high speed 12- to 18-bit A/D converters. Featuring a 3dB bandwidth of 4.5 GHz, the ADL5566 differential amplifier is optimized for wideband, high IF (intermediate frequency), low distortion, and noise performance out to 500 MHz.