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Articles Tagged with ''amplifier''

RFMW introduces 2 x 2 mm LNA from TriQuint Semiconductor

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’s TQP3M9037, internally matched, low noise amplifier combining a 0.4 dB noise figure with 20 dB gain and 35 dBm OIP3 in a 2 x 2 mm DFN package. This newest addition to TriQuint’s LNA product line provides an instantaneous bandwidth of 1500 to 2700 MHz and requires only bypass/blocking capacitors and a bias inductor for operation, no matching components are required to achieve this high level of performance.


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Aethercomm introduces a high power GaN SSPA

Aethercomm Inc., has recently completed a high power SSPA using a Gallium Nitride (GaN) with a frequency range covering 2.9 to 3.1 GHz: Aethercomm part number SSPA 2.9-3.1-300. The devices in this amplifier design are not matched, therefore the frequency band is scalable from 2.7 to 2.9 GHz or 2.7 to 3.5 GHz with similar performance. This high power SSPA produces 300 to 400 watts peak output power.


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Javelin Semiconductor supplies PA to Samsung for Galaxy S Duos

Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd., has selected Javelin’s PA for the new Galaxy S Duos with dual SIM functionality. The Galaxy S Duos is a stylish Android-based smartphone that features a 4-inch touchscreen, 1 GHz processor, 5 megapixel camera, Bluetooth, GPS and Wi-Fi.


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Miyoshi selects Mesuro Open Loop Active Harmonic Load Pull solution

Mesuro, the Cardiff University spin-out, which offers testing and services solutions for the semiconductor industry, has announced successful completion and installation of its Open Loop Active Harmonic Load Pull system at Miyoshi Corp., Itami, Japan. This system represents the company’s first success in what it sees as the potentially lucrative Japanese market.


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