Freescale Semiconductor revealed its first RF power amplifier product built using gallium nitride (GaN) technology. The company’s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.
Plextek (www.plextek.com), a leading designer of custom ICs operating at microwave and mm-wave frequencies, will be presenting details of a low cost, SMT packaged, 6 to 18GHz, 0.5W amplifier integrated circuit (IC) at the International Microwave Symposium, the world’s largest microwave conference and exhibition.
Analog Devices invites you to visit its booth at the IEEE International Microwave Symposium (IMS) to explore ADI's high performance RF ICs and world-leading data converters, covering bits to antenna and back.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.
Amalfi® Semiconductor Inc., an emerging leader in cost effective, high performance power amplifier solutions for cellular handsets, today announced that its AM7808 CMOS high-power, highefficiency transmit module has been selected by Samsung Electronics Co. Ltd. for multiple high-volume 2G handset platforms targeting emerging markets.
Hittite Microwave Corp. announced the release of two new amplifier and three new mixer products that are ideal for microwave & millimeterwave radios, military sensors, test & measurement equipment and SatCom applications from 24 to 46.5 GHz.
At the 2012 April ARMMS RF & Microwave Society Meeting, held near Oxford, UK, Robert Smith of Cardiff University and Stephen Russell of Glasgow University both received newly introduced Young Engineer Prizes, intended to recognise and encourage engineers beginning their career in RF & Microwave technology.
Nitronex has been awarded a Phase I SBIR to develop a highly efficient 20W X-band GaN power amplifier MMIC for use in long range RF telecommunications. Since 2005, Nitronex has won 16 government contract awards that have funded the development of materials, devices, discretes, MMICs, and process technologies, as well as manufacturing maturation.
Four new MMIC Upconverter and Downconverter devices from RFMD offer high performance and low cost for high frequency applications. The RFUV1002 and RFUV1003 Upconverters incorporate an image rejection mixer, LO buffer amplifier, variable gain amplifier, and DC-decoupling capacitor. The RFRX1001 and RFRX1002 Downconverters incorporate an image rejection mixer, LO buffer amplifier, integrated LNA, and DC-decoupling capacitor. Each device is packaged in a 5 x 5 mm QFN to simplify both system-level board design and volume assembly.
Custom MMIC is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB.