advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

Articles Tagged with ''catv''

MACOM introduces new high-performance DOCSIS 3.1 compliant CATV diplex filters

M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, today announced three new families of diplex filters designed for DOCSIS 3.0 and DOCSIS 3.1 infrastructure equipment. Available in plug-and-play vertical and horizontal form factors along with surface mount configurations, MACOM's new high-performance diplex filters are ideally suited for use in CATV infrastructure spanning nodes, system amplifiers, line extenders, drop amplifiers and RFoG ONUs. 


Read More

RFMD wins CableFAX Tech Award for Green Technology

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that its Gallium Nitride (GaN) amplifier family for the new DOCSIS 3.1 CATV networking standard has won the CableFAX Tech Award for Green Technology. CableFAX's Green Technology Award recognizes technology that helps cable companies and program distributors cut energy consumption in equipment installed at the headend and/or in equipment distributed to residential and business customers.

Read More

TriQuint expands CATV portfolio with infrastructure hybrids and GaN amplifiers

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released the first two members of its cost-effective TriAccess™ hybrid-packaged power doubler family. These CATV infrastructure devices are the first to utilize proprietary on-die linearization for best-in-class performance including excellent gain and low distortion. TriQuint is also announcing full production of two new GaN monolithic microwave integrated circuit (MMIC) power doublers for CATV infrastructure.


Read More

RFMD introduces world's first 6-Inch GaN-on-SiC wafers for RF power transistors

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.


Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement