Articles Tagged with ''rfmd''

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RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that all agenda items at RFMD's 2012 Annual Meeting of Shareholders were approved by the shareholders.

RF Micro Devices Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it is enabling Samsung's next-generation GALAXY Note II with RFMD's PowerSmart® Power Platforms — the industry's first and only converged multimode, multiband (MMMB) power amplifiers.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec Expo 2012, to be held October 17-19, 2012, in Orlando, Florida.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled two new CATV control components, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new components include the RFSA2654, a 75-ohm broadband digital step attenuator, and the RFSW1012, a high power handling single-pole, double-throw switch (SPDT).

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the appointment of Alan Hallberg as the company's corporate vice president and chief marketing officer (CMO). In the role of CMO, Hallberg will oversee RFMD's global marketing activities and will be based in RFMD's growing Silicon Valley, CA, location.

RF Micro Devices Inc. been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced a definitive agreement to acquire Amalfi Semiconductor (Amalfi), a leading fabless semiconductor company specializing in cost effective, high performance RF and mixed-signal ICs for the rapidly growing entry-level smartphone market.

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the availability of the RFFM6903 front end module (FEM). RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz — 960 MHz frequency band.