Articles Tagged with ''rfmd''

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RF Micro Devices Inc. announced it continues to achieve performance milestones related to the advancement of RF power management. RF Micro Devices is developing average power tracking- (APT-) and envelope tracking- (ET-) based solutions that leverage RFMD’s leadership in power amplifiers, RF power management and compound semiconductors to deliver breakthrough capabilities.

RF Micro Devices Inc. announced the expansion of the cmpany’s family of PowerSmart^® power platforms to include multiple new 3G and 4G LTE PowerSmart product variants. RFMD’s PowerSmart power platforms are at the forefront of the technology shift to converged front ends in multimode, multi-band applications, including smartphones, tablets, and other data-centric mobile broadband devices.

RF Micro Devices Inc. announced it has shipped over one billion cellular power amplifiers (PA) to handset manufacturers headquartered in the Greater China area. This significant industry milestone demonstrates RFMD's ongoing commitment to providing China-based customers with operational scale, technological innovation and an industry-leading cost structure.

RF Micro Devices Inc. announced LG has selected RFMD to supply multiple components in support of the LG Optimus 4X HD and the Optimus 3D Max smartphones. LG's Optimus 4X HD and Optimus 3D Max are expected to be available globally in 2012.

RF Micro Devices, Inc. announced that Jerry Neal, co-founder and executive vice president of marketing, is retiring from RFMD, effective May 31, 2012.

RF Micro Devices, Inc. announced it has been granted ISO/TS 16949 certification. The ISO/TS 16949 certificate is the highest international quality standard for the automotive industry, and ISO/TS 16949 certification demonstrates RFMD’s commitment to excellence in product design and manufacturing processes for automotive applications.

RF Micro Devices Inc. announced it will showcase its broad portfolio of products and technologies for the wireless and wired broadband markets at the upcoming IEEE International Microwave Symposium (IMS), held June 17-22, in booth 1210 at the Palais des congres Montreal, Canada.

Explore the RFMD® industry-leading RF and microwave product portfolio in booth 1210, with kiosks featuring solutions for WiFi and smart energy, wireless infrastructure, GaN RF power, microwave MMICs, and custom foundry services.

RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

RF Micro Devices Inc. announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.