Freescale Semiconductor, a global leader in radio frequency (RF) power transistors, announced the availability of 11 new commercial RF power LDMOS products that can meet the requirements of U.S. defense electronics applications. This is the first set of products released as part of the company’s strategic defense initiatives for its RF power business, announced in June 2013.
Richardson RFPD, Inc. today announced the online availability of videos of the presentations from the leading innovators and suppliers of RF, Wireless & Energy Technologies that the company hosted at its booth at the International Microwave Symposium (IMS) 2013 in Seattle.
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new laterally diffused metal oxide semiconductor (LDMOS) transistor targeting land mobile radio from Freescale Semiconductor Inc.
Maxim Integrated Inc. and Freescale Semiconductor® have collaborated to showcase a comprehensive LTE/3G picocell base station at the2013 Mobile World Congress. This innovative small cell base station platform design is field deployable by mobile operators and also serves as a production-ready reference design to accelerate time to market for equipment manufacturers.
Freescale Semiconductor announced new two-stage, low-noise amplifiers (LNAs) that address two gain stages in one device and deliver coverage across multiple bands to simplify wireless base station designs.