M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the newNPA1006, a Gallium Nitride (GaN) wideband power amplifier optimized for 20-1000 MHz operation. This GaN on Silicon (Si) HEMT D-Mode Amplifier is suited for narrowband to broadband applications spanning test and measurement, defense communications, land mobile radio and wireless infrastructure.
Qorvo, Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced the introduction of high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers in plastic packages designed to improve the size, weight and power performance in commercial and military S-band radar applications.
RFMW Ltd. and XMA Corp. have announced a worldwide distribution agreement effective April 1, 2015. XMA Corp., powered by Omni Spectra®, offers a complete line of RF coaxial passive components that range from DC to 50GHz and offer power handling up to 500 Watts. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.
Radio Frequency Systems (RFS), a global wireless and broadcast infrastructure specialist, has announced a new addition to its InvisiLine™ small-form antenna (SFA) product family, designed to minimize visual impact by allowing better integration into any urban environment. The new SFA04-W800 E-band antennais one of the most discreet E-band (80 GHz) microwave antennas ever developed. Its light weight, compact design, multi-band capabilities and low-profile aesthetics make the SFA04-W800 ideal for small cell, front haul and traditional backhaul systems.
Mobile operators worldwide can now deploy LTE, 5G and small cell networks faster with a new family of jumper cables equipped with next-generation connectors from Radio Frequency Systems (RFS), the global wireless and broadcast infrastructure specialist. Based on the 4.3-10 interface standard, the new addition to the RFS product portfolio leverages RFS innovations in Passive Intermodulation (PIM) and cable corrugation to deliver jumpers with the highest voltage standing wave ratio (VSWR) and PIM performance available in jumper cables with similar connectors.
Cree, Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has released the highest power Ku-Band MMIC available on the market.
Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced a new gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process technology that provides higher gain/bandwidth and lower power consumption than competing semiconductor processes.
Analog Devices, Inc., a global leader in high-performance semiconductors for signal processing applications, announced that its complete RF and microwave portfolio, including the Hittite microwave products from Analog Devices, is now available for sale through the company’s extensive distribution network.
L-3 Southern California Microwave announced that it has been selected by Lockheed Martin’s Mission Systems and Training (LM MST) business to provide its MICRO Secure Digital Data Link (MICRO SDDL) as the secure command & control and ISR communications backbone for the U.K. Ministry of Defence’s (MOD) digital Desert Hawk III DDL small unmanned aircraft system (SUAS) platform.
API Technologies Corp., a leading provider of high performance RF/microwave, power and security solutions for high-reliability applications, has added the APPREG2 to its line of radiation-hardened (rad-hard) power management products.