- Buyers Guide
Articles Tagged with ''mosfet''
Linear's 9 to 72 V ideal diode bridge controller now specified for military & automotive applications
Linear Technology Corp. announces the automotive (H-grade) and high reliability military (MP-grade) versions of the LT4320, an ideal diode bridge controller for 9 to 72 V systems. The LT4320 replaces a full-wave diode bridge rectifier with a low loss N-channel MOSFET bridge to reduce the power and voltage losses by a factor of ten or more. Power supply size is reduced as the enhanced power efficiency eliminates bulky heat sinks.
Linear Technology Corp. announces the LT8309, a flyback secondary-side synchronous rectifier driver that replaces the output diode with a MOSFET, allowing up to 10A output current without the use of a heat sink. The maximum output current of a flyback power supply has been limited by the power loss and heat generated from the output diode when no heat sink is used.
Vishay Intertechnology Inc. extended its offering of TrenchFET® p-channel Gen III power MOSFETs with a new device that offers the lowest on-resistance ever for a p-channel MOSFET. Designed to increase efficiency in mobile computing devices, the -20 V Vishay Siliconix Si7157DP offers on-resistance of 0.0016 Ω and 0.0020 Ω at -10 V and -4.5 V ratings, respectively.
Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).
NXP Semiconductors has introduced the first transistors in a 1.1 mm by 1 mm by 0.37 mm low-profile discrete flat no-leads (DFN) package that boost current capabilities up to 3.2 A.
Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency. According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.
Richardson RFPD Inc. announces availability and full design support capabilities for two new high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFETs from Microsemi Corp. (Microsemi).
Richardson RFPD Inc. announces availability and full design support capabilities for eleven new low loss, high density silicon carbide (SiC) MOSFET power modules from Microsemi Corporation (Microsemi).
IXYS Corp., a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced the introduction of the IXRFD630 and IXRFD631 High Power RF MOSFET Drivers by its IXYS Colorado division. These drivers succeed the DEIC420 and DEIC421 and represent the next generation of RF driver for many RF applications including 13.56 and 27.12 Mhz RF power.
Richardson RFPD Inc. announces availability of the latest Silicon Carbide (SiC) power MOSFET from Cree Inc. (Cree). The second-generation SiC Z-FET™ 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs.