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Articles Tagged with ''mosfet''

Linear's 9 to 72 V ideal diode bridge controller now specified for military & automotive applications

Linear Technology Corp. announces the automotive (H-grade) and high reliability military (MP-grade) versions of the LT4320, an ideal diode bridge controller for 9 to 72 V systems. The LT4320 replaces a full-wave diode bridge rectifier with a low loss N-channel MOSFET bridge to reduce the power and voltage losses by a factor of ten or more. Power supply size is reduced as the enhanced power efficiency eliminates bulky heat sinks.


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Linear introduces flyback synchronous rectifier driver that provides 10 A output current

Linear Technology Corp. announces the LT8309, a flyback secondary-side synchronous rectifier driver that replaces the output diode with a MOSFET, allowing up to 10A output current without the use of a heat sink. The maximum output current of a flyback power supply has been limited by the power loss and heat generated from the output diode when no heat sink is used.


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Vishay offers industry-low RDS(on) for a p-channel MOSFET

RFIC

Vishay Intertechnology Inc. extended its offering of TrenchFET® p-channel Gen III power MOSFETs with a new device that offers the lowest on-resistance ever for a p-channel MOSFET. Designed to increase efficiency in mobile computing devices, the -20 V Vishay Siliconix Si7157DP offers on-resistance of 0.0016 Ω and 0.0020 Ω at -10 V and -4.5 V ratings, respectively.


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Cree SiC MOSFETs revolutionize HEV/EV power converters

Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency.  According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.


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IXYS Colorado introduces the IXRFD630 and IXRFD631 high power RF drivers

IXYS Corp., a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced the introduction of the IXRFD630 and IXRFD631 High Power RF MOSFET Drivers by its IXYS Colorado division. These drivers succeed the DEIC420 and DEIC421 and represent the next generation of RF driver for many RF applications including 13.56 and 27.12 Mhz RF power.


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