Articles Tagged with ''gaas''

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Custom MMIC (www.CustomMMIC.com), a developer of performance driven monolithic microwave integrated circuits (MMICs), introduced three new devices from its growing MMIC IP/design library. CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB.

Gaas Labs LLC, a private investment fund targeting the communications semiconductor market led by industry veteran John Ocampo, announced that it has acquired privately-held Nitronex Corp., an innovative leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets.

Hittite Microwave Corp. launched three new GaAs pHEMT MMIC power amplifiers which cover the 9 to 14 GHz frequency range and are ideal for microwave radio, military and space, SATCOM and test and measurement applications.

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is rolling out new processes to more quickly expand its catalog of broad-market products for commercial and defense customers. As a result, TriQuint will spotlight 12 new products at European Microwave Week in Amsterdam, October 29-31.

The Samsung Galaxy Appeal is one of the first mass produced phones to ship with a high performance 3G CMOS power amplifier (PA).  Despite an historical presence from CMOSin the 2G handset market concerns over performance have severely limited its progress in the 3G domain.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new GaAs hybrid amplifiers from ANADIGICS. The ACA2786 and ACA2788 each consist of two pairs of parallel amplifiers that are optimized for exceptionally low distortion and noise figure with input and output transient voltage protection.

In the past RF power amplifiers (RFPAs) for cell phone handsets have relied exclusively on GaAs or InGaP-based RFICs. However in recent years RF CMOS RFPA technology has made significant strides and is now strongly impacting the territory that was previously the exclusive domain of GaAs or InGaP technology. This new report from Engalco provides information concerning the players, industry dynamics and detailed, highly granular, market forecasts through to year 2017.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released two new dual matched low noise amplifiers that are ideally suited for balanced high performance RF design configurations. These integrated LNAs are highly linear and offer very low noise figures, high output and include automatic shut-down capability for use in Time Division Duplex (TDD) and Frequency-Domain Duplex (FDD) applications.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced that RFMD Fellow Kevin W. Kobayashi has been named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) by the IEEE Board of Directors.