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Articles Tagged with ''gaas''

Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

Cree Inc.
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Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.


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RFMD wins CableFAX Tech Award for Green Technology

RFMD
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RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that its Gallium Nitride (GaN) amplifier family for the new DOCSIS 3.1 CATV networking standard has won the CableFAX Tech Award for Green Technology. CableFAX's Green Technology Award recognizes technology that helps cable companies and program distributors cut energy consumption in equipment installed at the headend and/or in equipment distributed to residential and business customers.

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Richardson RFPD introduces two new hybrid amplifiers for CATV from TriQuint

Richardson RFPD Inc.
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Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new hybrid amplifiers for CATV applications from TriQuint.


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New AWR white paper on high-frequency module design now available

AWR Corp.
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AWR Corp. offers the second in a series of white papers addressing RF/Microwave design flow issues. This latest offering, “EDA Software Design Flow Considerations for the RF/Microwave Module Designer,” outlines the steps for implementing an integrated design flow within the Microwave Office® design suite for an MCM microwave monolithic integrated circuit (MMIC) design. 


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The Economics of GaAs and CMOS PAs: Crunch Time

Joe Madden, Mobile Experts, Campbell, CA
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TriQuint expands CATV portfolio with infrastructure hybrids and GaN amplifiers

TriQuint Semiconductor Inc.
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TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released the first two members of its cost-effective TriAccess™ hybrid-packaged power doubler family. These CATV infrastructure devices are the first to utilize proprietary on-die linearization for best-in-class performance including excellent gain and low distortion. TriQuint is also announcing full production of two new GaN monolithic microwave integrated circuit (MMIC) power doublers for CATV infrastructure.


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RFMD introduces world's first 6-Inch GaN-on-SiC wafers for RF power transistors

RFMD
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RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.


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New AWR white paper: Design Flow Considerations for PA MMIC Design

AWR Corp.
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A new white paper from AWR, “RF/Microwave EDA Software Design Flow Considerations for PA MMIC Design,” examines a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) power amplifier (PA) design approach from a systems perspective.


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TriQuint acquires CAP Wireless and its Spatium Technology

TriQuint Semiconductor Inc.
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TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced that it has acquired CAP Wireless (Newbury Park, CA) and its patented Spatium™ RF power combining technology that replaces traveling wave tube amplifiers (TWTAs) in communications and defense systems. TriQuint estimates that the TWTA market opportunity will be about $600 million by 2015.


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Fully-screened control devices and amplifiers available from KCB

KCB Solutions
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KCB Solutions, an ITAR and AS9100 accredited microwave design and manufacturing center, is pleased to announce a new line of fully-screened Hi-Rel switches, attenuators, and power amplifiers. These GaAs devices meet the screening and qualification requirements of MIL-PRF-38534 and MIL-PRF-38535 and are available in a choice of leaded packages or newly qualified KCB hermetic QFNs.


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