Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.
RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that its Gallium Nitride (GaN) amplifier family for the new DOCSIS 3.1 CATV networking standard has won the CableFAX Tech Award for Green Technology. CableFAX's Green Technology Award recognizes technology that helps cable companies and program distributors cut energy consumption in equipment installed at the headend and/or in equipment distributed to residential and business customers.
AWR Corp. offers the second in a series of white papers addressing RF/Microwave design flow issues. This latest offering, “EDA Software Design Flow Considerations for the RF/Microwave Module Designer,” outlines the steps for implementing an integrated design flow within the Microwave Office® design suite for an MCM microwave monolithic integrated circuit (MMIC) design.
TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released the first two members of its cost-effective TriAccess™ hybrid-packaged power doubler family. These CATV infrastructure devices are the first to utilize proprietary on-die linearization for best-in-class performance including excellent gain and low distortion. TriQuint is also announcing full production of two new GaN monolithic microwave integrated circuit (MMIC) power doublers for CATV infrastructure.
RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.
A new white paper from AWR, “RF/Microwave EDA Software Design Flow Considerations for PA MMIC Design,” examines a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) power amplifier (PA) design approach from a systems perspective.