- Buyers Guide
Researchers at MIT have found a new way of making complex three-dimensional structures using self-assembling polymer materials that form tiny wires and junctions. The work has the potential to usher in a new generation of microchips and other devices made up of submicroscopic features.
Sumitomo Electric Device Innovations USA Inc. (SEDU), a provider of advanced wireless and optical communications solutions, will showcase its E-band MMICs for radio link applications at IMS 2012 in Montreal.
Vishay Intertechnology Inc. introduced the industry's first wirebondable thin film chip resistors with compact 40 x 40 mil (1 x 1 mm) footprints to feature high resistance to 100 MΩ. The new CS44 <http://www.vishay.com/doc?60114> series features low TCR down to ± 50 ppm/°C and tolerances to ± 0.5 %.
Florida RF Labs has added broadband resistive power dividers to the HybriX® line of signal distribution products. The new RPD series offers significant advantages over on-board multi-resistor design by providing excellent broadband frequency response, highly repeatable performance, and streamlined assembly process in a monolithic surface-mountable chip package.
Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.
Microsemi Corp., a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, delivered the world's first monolithic silicon germanium (SiGe) RF front-end (FE) device for the 5th generation of Wi-Fi devices based on IEEE 802.11ac standard. Benefitting from its industry-leading integration levels and utilizing high-performance SiGe process technology, the new LX5586 RF FE provides significant performance and cost advantages over existing technologies.
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