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Articles Tagged with ''mmic''

Wolfspeed releases new 28 V 30 W GaN HEMT die

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11–13, 2016 in Clearwater Beach, Fla.


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Wolfspeed to present and exhibit at GOMACTech 2016

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMT) and monolithic microwave integrated circuits (MMIC) with best-in-class reliability, is exhibiting and presenting at the 2016 Government Microcircuit Applications and Critical Technology Conference (GOMACTech), the premier annual event dedicated to government-funded micro- and nano-electronic research. 


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Wolfspeed to promote X-Band radar products at IRSI 2015

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting its portfolio of GaN RF devices for L-, S-, C-, and X-Band radar at the 2015 International Radar Symposium India (IRSI-15), which will take place December 15–19 in Bangalore.  


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Wolfspeed GaN HPAs have 24/7/365 reliability confirmed by Lockheed Martin

Wolfspeed, a Cree Company, has partnered with Lockheed Martin to provide GaN high power amplifiers (HPAs) for the U.S. Air Force’s Space Fence, which will significantly improve the timeliness with which operators can detect space events that could potentially threaten GPS satellites or the International Space Station.


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Qorvo set to double GaN capacity

MWJ talks one-on-one with James Klein, Qorvo's president of infrastructure and defense products

Qorvo Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers. The transition from 4-inch to 6-inch wafers is expected to approximately double Qorvo's GaN on SiC manufacturing capacity and favorably impact manufacturing costs – significantly accelerating the affordable manufacture of RF devices.


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