Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting at DMC 2015, which will take place November 30 – December 3 in Phoenix, Ariz.
Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMIC), is now offering a new, low noise amplifier (LNA) that is perfect for EW and communication systems where small size and low power consumption are critical — the CMD223 9 to 18 GHz balanced low noise amplifier.
Wolfspeed, a Cree Company, has partnered with Lockheed Martin to provide GaN high power amplifiers (HPAs) for the U.S. Air Force’s Space Fence, which will significantly improve the timeliness with which operators can detect space events that could potentially threaten GPS satellites or the International Space Station.
Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), is pleased to announce the appointment of Aspen Electronics as their new technical representative covering the United Kingdom.
Guerrilla RF Inc., a leading provider of high performance MMICs, introduced a new addition to the company’s family of high linearity gain blocks featuring a unique combination of simple-application schematic, flat gain and high compressed output power which operate from near DC up to 4 GHz.
Qorvo Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers. The transition from 4-inch to 6-inch wafers is expected to approximately double Qorvo's GaN on SiC manufacturing capacity and favorably impact manufacturing costs – significantly accelerating the affordable manufacture of RF devices.
Cree Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is introducing two industry-leading new products and contributing to a series of workshop presentations about current trends in GaN packaging at the 2015 International Microwave Symposium (IMS).