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Articles Tagged with ''x-band''

Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.


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Pasternack introduces all new line of X-Band amplifiers

Pasternack Enterprises Inc., an industry leading manufacturer and supplier of RF, microwave and millimeter wave products, introduces a new family of coaxial X-Band high gain power amplifiers. These RF amplifiers are typically used as driver amplifiers or high power output amplifiers in a wide variety of commercial, industrial and military applications including telecom infrastructure, test instrumentation, fixed microwave backhaul, radar systems, communication systems, satellite communications and commercial avionics.


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Raytheon continues to drive GaN evolution through cutting edge innovation

Aerospace & Defense

Raytheon Co. announced today that under the DARPA Microsystems Technology Office (MTO) Wide Bandgap Semiconductor Program, the company has systematically matured Gallium Nitride (GaN) from basic material to transistors, Monolithic Microwave Integrated Circuits (MMICs), Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs), enabling game changing system performance for the DoD.  


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